In this paper, gallium nitride (GaN) growth chemistry is characterized by two competing
reaction pathways. An overview of GaN gas-phase and surface-phase chemistry is used to …

This review provides an introduction to III-Nitrides MOVPE process modeling and its
application to the design and optimization of MOVPE processes. Fundamentals of the …

We report chemical modification of self-assembled block copolymer thin films by ultraviolet
light that enhances the block-selective affinity of organometallic precursors otherwise …

Experimental studies of AlN and AlGaN deposition in a 3× 2 ″Thomas Swan close-coupled
showerhead reactor have revealed the effect of growth rate reduction at enhanced ammonia …

We have investigated gas-phase reactions driven by silane (SiH 4), which is the dopant
precursor in the metalorganic chemical vapor deposition (MOCVD) of aluminum nitride (AlN) …

During simulation of the growth of indium nitride (InN) thin films in metal–organic chemical
vapor deposition (MOCVD), different choices of kinetic parameters (activation energy E a …

We have used a combination of experiments, reactor modeling, and quantum chemical
calculations to investigate parasitic chemical reactions that occur during AlGaInN MOVPE …

In this project, we systematically investigated the gas-phase reaction mechanisms in InN
MOVPE process through density functional theory (DFT) computations. We proposed all …

The metalorganic vapor-phase epitaxy (MOVPE) growth of GaN from TMGa and NH3 at
higher process pressures up to near-atmospheric pressure in commercial production scale …

Advances have been made in multiscale modeling strategies for thin film growth by physical
and chemical vapor deposition techniques. Considerable efforts have been devoted in the …