Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Recent advances in theoretical development of thermal atomic layer deposition: a review
M Shahmohammadi, R Mukherjee, C Sukotjo… - Nanomaterials, 2022 - mdpi.com
Atomic layer deposition (ALD) is a vapor-phase deposition technique that has attracted
increasing attention from both experimentalists and theoreticians in the last few decades …
increasing attention from both experimentalists and theoreticians in the last few decades …
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer - Journal of applied physics, 2010 - pubs.aip.org
Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …
interfaces and their distribution in the semiconductor band gap are compared. The …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
G He, X Chen, Z Sun - Surface Science Reports, 2013 - Elsevier
Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
Border traps in Al2O3/In0. 53Ga0. 47As (100) gate stacks and their passivation by hydrogen anneals
Charge-trapping defects in Pt/Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor
capacitors and their passivation by hydrogen are investigated in samples with abrupt …
capacitors and their passivation by hydrogen are investigated in samples with abrupt …
Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
Interface characterization was carried out on Al 2 O 3/GaN structures using epitaxial n-GaN
layers grown on free-standing GaN substrates with relatively low dislocation density (< 3× 10 …
layers grown on free-standing GaN substrates with relatively low dislocation density (< 3× 10 …
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
We report on the electrical characteristics of HfO 2 and HfO 2/Al 2 O 3 gate dielectrics
deposited on n-In 0.53 Ga 0.47 As by atomic layer deposition, after in-situ hydrogen or …
deposited on n-In 0.53 Ga 0.47 As by atomic layer deposition, after in-situ hydrogen or …
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0. 53Ga0. 47As metal-oxide …
The inversion behaviors of atomic-layer-deposition Al 2 O 3/n-In 0.53 Ga 0.47 As metal-
oxide-semiconductor capacitors are studied by various surface treatments and …
oxide-semiconductor capacitors are studied by various surface treatments and …