Vertical nanostructure technologies are becoming more important for the down scaling of
nanoelectronic devices such as logic transistors or memories. Such devices require dense …

Ab initio density functional theory is used to simulate electronic structure of hydrogenated
SiGe nanocrystal superlattice pure and doped with substitutional P single atom. The results …

Abstract Density Functional Theory calculations are used to map out the preferential oxygen
molecule adsorption sites and oxygen atom incorporation on germanium (100) surface. A …

Abstract Fabrication of Si (nc-Si), Ge (nc-Ge), and Si 1− x Ge x (nc-Si 1− x Ge x) nanocrystals
embedded in SiO 2 matrix is achieved by thermal annealing of magnetron-sputtered thin …

SiGe channels can be used to boost the hole mobility and tailor the threshold voltage shift in
advanced p-type Metal Oxide Semiconductor Field Effect Transistors. An efficient removal of …

A first-principles pseudo-potential study of Frenkel pair generation close to the Si (100)
surface in the presence of germanium and oxygen atoms is reported. The energies and …

We investigate the migration pathway and barrier for B diffusion at SiGe/SiO 2 interface
through first-principles density functional calculations. Similar to the diffusion mechanism …

Synchrotron radiation photoelectron spectroscopy was applied to conduct chemical analysis
of Ge oxides formed at the Ge (100) 2× 1 surface in atmosphere at room temperature. High …

SiGe channels can be used to boost the hole mobility and tailor the threshold voltage shift in
advanced p-type Metal Oxide Semiconductor Field Effect Transistors. An efficient removal of …

Introduction générale Page 1 Page 2 Page 3 Sommaire Introduction générale .............................................................................................................
1 Chapitre 1 : Mémoires non volatiles à nanoplôts ................................................................ 5 1 …