Ultrasmall-scale semiconductor devices (≤ 5 nm) are advancing technologies, such as
artificial intelligence and the Internet of Things. However, the further scaling of these devices …

For realizing Ge CMOS devices with a small equivalent oxide thickness (EOT) and a low
density of fast interface states (D it), understanding of slow traps in Ge gate stacks and …

We report improvement of TiN/Y 2 O 3/Si 0.78 Ge 0.22 metal-oxide-semiconductor (MOS)
interface properties by employing the trimethylaluminum (TMA) pretreatment before Y 2 O 3 …

SnO 2-based TFTs were fabricated by using the sol-gel spin coating method. SnO 2
semiconductor films used as active layers were coated on oxidized Si with different SiO 2 …

In this paper, the optimization of SiGe interface properties for the SiGe channel fin field effect
transistor (FinFET) transistor is explored in detail. First, optimal low-temperature ozone …

For realizing of Ge complementary metal-oxide-semiconductor with a Ge gate stack with thin
equivalent oxide thickness, low interface state density (D it) and high reliability. In this paper …

Interface traps (ITs) and border traps (BTs) in Al 2 O 3/GeO x/p-Ge gate stacks were
characterized using deep-level transient spectroscopy. Through evaluating the gate stacks …

The properties of slow electron traps in n-Ge MOS interfaces over a wide range of electrical
field across gate oxides (E ox) are systematically investigated. It is found through careful …

Germanium is an attractive material for advanced devices such as high speed transistors
and high efficiency optical devices. To realize the high performance operation, low resistive …

The realization of Ge gate stacks with thin equivalent oxide thickness (EOT), low interface
state density (D it) and small hysteresis is a crucial issue for Ge CMOS. In this study, we …