A split-gate SiC trench MOSFET with a hetero-junction diode (HJD) is proposed and
numerically analyzed in this paper. The proposed structure features the HJD to effectively …

The advancements in semiconductor technology greatly impact the growth of hybrid VLSI
devices and components. The nanometer technology has been possibly executed due to the …

In HV (high-voltage) and HF (high-frequency) applications, SiC (silicon carbide) MOSFET is
widely used for its small parasitic characteristics and fast switching speed. Using discrete …

In this paper, we propose 4H-SiC UMOSFET structure with improved single-event burnout
(SEB) hardening characteristics, and compare it with the conventional UMOSFET structure …

In power converters with high switching frequency, drive losses constitute a significant
portion of the overall power losses. Resonant gate drivers can reduce drive losses, thereby …

In this article, a 1200-V asymmetric trench (AT) silicon carbide (SiC) metal–oxide–
semiconductor field effect transistor (MOSFET) with an integrated junction field effect …

Cylindrical Surrounding Double-Gate (CSDG) MOSFETs have been designed for a suitable
CMOS replacement to diminish the power and area tradeoff. With these MOSFETs below 70 …

In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor
(MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting …

Resonant gate driver (RGD) is a premium solution for driving power transistors in high-
frequency and high-power-density applications, with the merits of much less power loss and …

In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by
parasitic parameters where crosstalk phenomenon in bridge arm will occur. This paper …