InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this …
M Bagheri, GD Spiers, C Frez… - IEEE Photonics …, 2015 - ieeexplore.ieee.org
The first unambiguous linewidth measurements are reported for fiber-pigtailed high-power distributed feedback (DFB) semiconductor lasers operating near 2.05 μm wavelength range …
RJ Chu, Y Kim, SW Woo, WJ Choi, D Jung - 2023 - s-space.snu.ac.kr
InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising quantum emitters for nextgeneration technologies in sensing and communications. In this …
This thesis is concerned with the theory, development and characterization of GaSb-based mid-IR mode-locked laser diodes (MLLD) and superluminescent light emitting diodes …
A Al-Muhanna, A Salhi - Optical and Quantum Electronics, 2014 - Springer
Multiple-quantum well InGaAs laser structures emitting at 2\upmu μ m with different barriers are modeled using commercial software that combines gain calculation with 2-D simulations …
The mid-infrared spectral region,~ 2–20 µm, is of interest for numerous sensing, medical, industrial, and military applications. The rovibrational transition energies of many important …