Defect engineering in MBE-grown CdTe buffer layers on GaAs (211) B substrates
Demand for high-performance HgCdTe infrared detectors with larger array size and lower
cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice …
cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice …
An in-depth analysis of CdTe thin-film deposition on ultra-thin glass substrates via close-spaced sublimation (CSS)
This study evaluated the impact of the deposition pressure on the formation of cadmium
telluride (CdTe) thin films on ultra-thin (100 µm) Schott glass substrate at high temperature …
telluride (CdTe) thin films on ultra-thin (100 µm) Schott glass substrate at high temperature …
Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy
SX Zhang, J Zhang, Y Wu, TT Kang, N Li… - Materials Research …, 2020 - iopscience.iop.org
To study how the Cd/As flux ratio affects the microstructure and transport properties for Cd 3
As 2 films, we used molecular beam epitaxy (MBE) to grow Cd 3 As 2 (224) thin films on …
As 2 films, we used molecular beam epitaxy (MBE) to grow Cd 3 As 2 (224) thin films on …
Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density
S Tyagi, A Goyal, SS Rana, UR Meena… - Journal of Materials …, 2024 - Springer
Abstract Cadmium telluride (CdTe)(211) epitaxial layers were grown on GaAs (211)
substrates. These CdTe layers were annealed under tellurium overpressure at different …
substrates. These CdTe layers were annealed under tellurium overpressure at different …
Defect Engineering in Epitaxially Grown Cd (Zn) Te Thin Films on Lattice-Mismatch Substrates
Abstract II–VI (Hg)(Cd)(Zn) Te semiconductors are significant materials with a wide range of
applications in high-end infrared (IR) sensing/imaging, radiation detectors, and solar cells …
applications in high-end infrared (IR) sensing/imaging, radiation detectors, and solar cells …
Defect Engineering in Epitaxially Grown
Fig. 1 A lattice constant vs. bandgap plot of common semiconductor materials [1] radiation
detectors used for gamma-ray spectroscopy, X-ray imaging, and medical imaging …
detectors used for gamma-ray spectroscopy, X-ray imaging, and medical imaging …
Dislocation Filtering Layers for Defect Reduction in the Heteroepitaxial Growth of Infrared Optoelectronic Materials
This chapter focuses on the utilization of strained cadmium zinc telluride (CdZnTe)/cadmium
telluride (CdTe) nanostructured buffer layers as dislocation filtering layers for defect …
telluride (CdTe) nanostructured buffer layers as dislocation filtering layers for defect …
[PDF][PDF] 傅里叶变换红外拉曼光谱检测半导体薄膜下衬底特性
王炜， 陈熙仁， 余灯广， 邵军 - 红外与毫米波学报, 2020 - researching.cn
高质量半导体薄膜是制备高性能光电器件的基础, 其光电子性质很大程度受衬底所制约,
实验检测薄膜下衬底性质, 有助于薄膜生长优化. 然而, 表面薄膜覆盖后的衬底特性检测通常受到 …
实验检测薄膜下衬底性质, 有助于薄膜生长优化. 然而, 表面薄膜覆盖后的衬底特性检测通常受到 …
[PDF][PDF] Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering
S Torres-Jaramillo, C Pulzara-Mora… - Universitas …, 2019 - revistas.javeriana.edu.co
Currently, the obtention of nano-structures based on III-V materials is expensive. This calls
for novel and inexpensive nanostructure manufacturing approaches. In this work we report …
for novel and inexpensive nanostructure manufacturing approaches. In this work we report …
Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211) B Heterostructures
E Bilgilisoy, E Özçeri, E Tarhan - Sakarya University Journal of …, 2020 - dergipark.org.tr
A three-inch-diameter high quality CdTe thin film was grown on a GaAs (211) B substrate by
molecular beam epitaxy (MBE) in ultra-high vacuum conditions. The CdTe/GaAs (211) B …
molecular beam epitaxy (MBE) in ultra-high vacuum conditions. The CdTe/GaAs (211) B …