Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
A reconfigurable fefet content addressable memory for multi-state hamming distance
Pattern searches, a key operation in many data analytic applications, often deal with data
represented by multiple states per dimension. However, hash tables, a common software …
represented by multiple states per dimension. However, hash tables, a common software …
In-memory computing with associative memories: A cross-layer perspective
Associative memories (AMs), which efficiently “associate” input queries with appropriate
data words/locations in the memory, are powerful in-memory-computing cores. Harnessing …
data words/locations in the memory, are powerful in-memory-computing cores. Harnessing …
Cosime: Fefet based associative memory for in-memory cosine similarity search
In a number of machine learning models, an input query is searched across the trained class
vectors to find the closest feature class vector in cosine similarity metric. However …
vectors to find the closest feature class vector in cosine similarity metric. However …
A 4T2R RRAM bit cell for highly parallel ternary content addressable memory
In this work, we present a four-transistor-two-resistor (4T2R) ternary content addressable
memory (TCAM) bit cell based on the resistive memory (RRAM), comprising the …
memory (TCAM) bit cell based on the resistive memory (RRAM), comprising the …
A flash-based multi-bit content-addressable memory with euclidean squared distance
Content-addressable memories (CAMs) can perform fast and energy-efficient search
operations. Recently, ternary CAMs (TCAMs) have been utilized to measure Hamming …
operations. Recently, ternary CAMs (TCAMs) have been utilized to measure Hamming …
Iccad tutorial session paper ferroelectric fet technology and applications: From devices to systems
The rapidly increasing volume and complexity of data is demanding the relentless scaling of
computing power. With transistor feature size approaching physical limits, the benefits that …
computing power. With transistor feature size approaching physical limits, the benefits that …
Ultradense one-memristor ternary-content-addressable memory based on ferroelectric diodes
In this Letter, for the first time, one-memristor (1M)-based ternary-content-addressable
memory (TCAM) with an ultradense 4F2 cell area is proposed on a single reconfigurable …
memory (TCAM) with an ultradense 4F2 cell area is proposed on a single reconfigurable …
An ultra-dense one-transistor ternary-content-addressable memory array based on non-volatile and ambipolar fin field-effect transistors
An ultra-dense one-transistor (1T) ternary-content addressable memory (TCAM) array is
reported that is based on high-performance, non-volatile, and ambipolar ferroelectric (Fe) …
reported that is based on high-performance, non-volatile, and ambipolar ferroelectric (Fe) …