Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
Study and analysis of advanced 3D multi-gate junctionless transistors
As the IC technology is evolving very rapidly, the feature size of the device has been
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
Device and circuit performance estimation of junctionless bulk FinFETs
MH Han, CY Chang, HB Chen… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
The design and characteristics of junctionless (JL) bulk FinFET devices and circuits are
compared with the conventional inversion-mode (IM) bulk FinFET using 3-D quantum …
compared with the conventional inversion-mode (IM) bulk FinFET using 3-D quantum …
The junctionless transistor
JP Colinge - Emerging devices for low-power and high …, 2018 - taylorfrancis.com
The junctionless transistor consists of a piece of uniformly doped semiconductor with a gate
placed between the source and drain contacts and is, therefore, the simplest transistor …
placed between the source and drain contacts and is, therefore, the simplest transistor …
Performance analysis of gate electrode work function variations in double-gate junctionless FET
With inherent structural simplicity due to the omission of ultrasteep pn junctions, the
conventional junctionless FET can be used as a barrier-controlled device with low OFF …
conventional junctionless FET can be used as a barrier-controlled device with low OFF …
Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing
Abstract In this paper, Dopingless Gate All Around (GAA) Vertical Nanowire Field Effect
Transistor (VNWFET) is designed with artificial material Indium Gallium Zinc Oxide (IGZO) as …
Transistor (VNWFET) is designed with artificial material Indium Gallium Zinc Oxide (IGZO) as …
Device and circuit performance analysis of double gate junctionless transistors at L g = 18 nm
The design and characteristics of double‐gate (DG) junctionless (JL) devices are compared
with the DG inversion‐mode (IM) field effect transistors (FETs) at 45 nm technology node …
with the DG inversion‐mode (IM) field effect transistors (FETs) at 45 nm technology node …
SiGe/Si hetero nanotube JLFET for improved performance: proposal and investigation
The authors report, for the first time, a novel SiGe/Si n‐type hetero nanotube (HNT)
junctionless field‐effect transistor (JLFET), which leads to a remarkably enhanced …
junctionless field‐effect transistor (JLFET), which leads to a remarkably enhanced …
Nanocantilever tri-gate junctionless cuboidal nanowire-FET-based directional pressure sensor
This paper proposes a designing of a directional pressure sensor based on NEMS
nanocantilever structure embedded on uniformly and highly doped junctionless triple gate …
nanocantilever structure embedded on uniformly and highly doped junctionless triple gate …
Temperature-dependent analytical modeling of graded-channel gate-all-around (GC-GAA) junctionless field-effect transistors (JLFETs)
In this paper, analytical modeling of center channel potential has been performed for graded-
channel gate-all-around (GC-GAA) junctionless field-effect transistor (JLFET). The three …
channel gate-all-around (GC-GAA) junctionless field-effect transistor (JLFET). The three …