Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing

KM McLaughlin, A Pharkya, KS Reddy - US Patent 9,847,221, 2017 - Google Patents
Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of
less than about 200 C. and is treated with helium plasma to reduce stress of the deposited …

Single-chamber sequential curing of semiconductor wafers

K Shrinivasan, F Wang, G Kamian, S Gentile… - US Patent …, 2012 - Google Patents
The present invention relates to curing of semiconductor wafers. More particularly, the
invention relates to cure chambers containing multiple cure stations, each featuring one or …

UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement

B Van Schravendijk, C Denisse - US Patent 8,242,028, 2012 - Google Patents
A method for the ultraviolet (UV) treatment of etch stop and hard mask film increases etch
selectivity and hermeticity by removing hydrogen, cross-linking, and increasing density. The …

UV treatment for carbon-containing low-k dielectric repair in semiconductor processing

B Van Schravendijk, W Crew - US Patent 7,851,232, 2010 - Google Patents
3,983,385 A 9, 1976 Troue 4,357,451 A 11, 1982 McDaniel 4,391,663 A 7/1983 Hutter, III
4,563,589 A 1, 1986 Scheffer 4.885, 262 A 12/1989 Ting et al. 5,178,682 A 1/1993 …

Toward successful integration of porous low-k materials: Strategies addressing plasma damage

K Lionti, W Volksen, T Magbitang… - ECS Journal of Solid …, 2014 - iopscience.iop.org
The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …

Porous dielectrics in microelectronic wiring applications

V McGahay - Materials, 2010 - mdpi.com
Porous insulators are utilized in the wiring structure of microelectronic devices as a means of
reducing, through low dielectric permittivity, power consumption and signal delay in …

UV and reducing treatment for K recovery and surface clean in semiconductor processing

B Varadarajan, GA Antonelli… - US Patent …, 2018 - Google Patents
Abstract Treatment of carbon-containing low-k dielectric with UV radiation and a reducing
agent enables process-induced damage repair. Also, treatment with a reducing agent and …

Carbon containing low-k dielectric constant recovery using UV treatment

BN Varadarajan, KM McLaughlin… - US Patent …, 2013 - Google Patents
(57) ABSTRACT A method for the ultraviolet (UV) treatment of carbon-con taining low-k
dielectric and associated apparatus enables pro cess induced damage repair. The methods …

Multi-station sequential curing of dielectric films

K Shrinivasan, M Rivkin, E Smargiassi… - US Patent …, 2013 - Google Patents
In the following description, numerous specific details are set forth in order to provide a
thorough understanding of the present invention. The present invention may be practiced …

Cascaded cure approach to fabricate highly tensile silicon nitride films

B Varadarajan, G Jiang, SK Reddy, JS Sims - US Patent 8,211,510, 2012 - Google Patents
Reference will now be made in detail to specific embodi ments of the invention. Examples of
the specific embodi ments are illustrated in the accompanying drawings. While the invention …