Emerging memory technologies: Recent trends and prospects

S Yu, PY Chen - IEEE Solid-State Circuits Magazine, 2016 - ieeexplore.ieee.org
This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies
including spin-transfer-torque magnetic random access memory (STTMRAM), phase …

Nanoscale resistive switching devices for memory and computing applications

SH Lee, X Zhu, WD Lu - Nano Research, 2020 - Springer
With the slowing down of the Moore's law and fundamental limitations due to the von-
Neumann bottleneck, continued improvements in computing hardware performance become …

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

C Li, L Han, H Jiang, MH Jang, P Lin, Q Wu… - Nature …, 2017 - nature.com
Memristors are promising building blocks for the next-generation memory and neuromorphic
computing systems. Most memristors use materials that are incompatible with the silicon …

Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

S Aldana, P García-Fernández… - Journal of Physics D …, 2020 - iopscience.iop.org
A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …

Resistive random access memory for future information processing system

H Wu, XH Wang, B Gao, N Deng, Z Lu… - Proceedings of the …, 2017 - ieeexplore.ieee.org
Resistive random access memory (RRAM) is regarded as one of the most promising
emerging memory technologies for next-generation embedded, standalone nonvolatile …

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

X Ding, Y Feng, P Huang, L Liu, J Kang - Nanoscale research letters, 2019 - Springer
Resistive random-access memory devices with atomic layer deposition HfO 2 and radio
frequency sputtering TiO x as resistive switching layers were fabricated successfully. Low …

SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio

A Bricalli, E Ambrosi, M Laudato… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
Resistive switching memory (RRAM) is among the most promising technologies for storage
class memory (SCM) and embedded nonvolatile memory (eNVM). Feasibility of RRAM as …

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

S Aldana, P García-Fernández… - Journal of Physics D …, 2017 - iopscience.iop.org
A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been
implemented. The redox reactions and migration of cations are developed taking into …

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

D Jana, S Roy, R Panja, M Dutta, SZ Rahaman… - Nanoscale research …, 2015 - Springer
The performances of conductive-bridging random access memory (CBRAM) have been
reviewed for different switching materials such as chalcogenides, oxides, and bilayers in …