With the slowing down of the Moore's law and fundamental limitations due to the von- Neumann bottleneck, continued improvements in computing hardware performance become …
D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and scalable memory technologies are being researched for data storage and data-driven …
Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon …
S Aldana, P García-Fernández… - Journal of Physics D …, 2020 - iopscience.iop.org
A simulation study has been performed to analyze resistive switching (RS) phenomena in valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
H Wu, XH Wang, B Gao, N Deng, Z Lu… - Proceedings of the …, 2017 - ieeexplore.ieee.org
Resistive random access memory (RRAM) is regarded as one of the most promising emerging memory technologies for next-generation embedded, standalone nonvolatile …
X Ding, Y Feng, P Huang, L Liu, J Kang - Nanoscale research letters, 2019 - Springer
Resistive random-access memory devices with atomic layer deposition HfO 2 and radio frequency sputtering TiO x as resistive switching layers were fabricated successfully. Low …
Resistive switching memory (RRAM) is among the most promising technologies for storage class memory (SCM) and embedded nonvolatile memory (eNVM). Feasibility of RRAM as …
A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into …
The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in …