We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

The layer exchange technique enables high-quality multilayer graphene (MLG) on arbitrary
substrates, which is a key to combining advanced electronic devices with carbon materials …

Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor
layers exchange during heat treatment. A great deal of effort has been put into research on …

A semiconductor thin film with high carrier mobility was fabricated on a flexible film. During
the solid-phase crystallization process of the densified amorphous Ge layer, the interfacial …

High-carrier mobility semiconductors on insulators are essential for fabricating advanced
thin-film transistors, allowing for three-dimensional integrated circuits or high-performance …

In recent times, the metal induced crystallization (MIC) process in amorphous
semiconductors (a-Si and a-Ge) has been extensively investigated by many researchers …

We investigated the effects of incorporation of 0%–2% tin (Sn) into amorphous germanium
(Ge) on its crystallization behavior and electrical properties. Incorporation of only 0.2% Sn …

Despite its long history, synthesizing n-type polycrystalline Ge layers with high-electron
mobility on insulating substrates has been difficult. Based on our recently developed solid …

The highest recorded hole mobility in semiconductor films on insulators has been updated
significantly. We investigate the solid-phase crystallization of a densified amorphous Ge …

For developing thermoelectric thin-film devices using reliable inorganic materials, we
investigated the synthesis of SiGe directly onto insulating substrates. An Al-induced layer …