Group-III nitride (III-N) films have numerous applications in LEDs, lasers, and high-
power/high-frequency electronic devices because of their direct wide band gap, high …

Light-emitting diodes with emission wavelengths less than 400 nm have been developed
using the AlInGaN material system. For devices operating at shorter wavelengths, alloy …

The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …

In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …

Ⅲ 族氮化物因具有禁带宽度大, 击穿电压高, 电子饱和漂移速度大, 稳定性高等优异特性而广泛
应用在发光二极管(LED), 激光器以及高频器件中. 目前Ⅲ 族氮化物薄膜通常是异质外延生长在 …

We demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on
sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well …

Solid-state light sources emitting at wavelengths less than 300nm would enable
technological advances in many areas such as fluorescence-based biological agent …

We demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet
light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode. The …

In this letter, we report the pulsed atomic-layer epitaxy of ultrahigh-quality AlN epilayers and
AlN/Al 0.85 Ga 0.15 N multiple quantum wells (MQWs) on basal plane sapphire substrates …

We investigated optical properties of single quantum well AlGaN-based UV 280 nm light-
emitting diodes using temperature-dependent photoluminescence (PL) measurement. We …