Off-the-shelf embedded systems have adopted heterogeneous multi-core processors which
have high-performance big cores and low-power small cores. Though there are two different …

An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature
instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article …

One of the threats to nanometric CMOS analog circuit reliability is circuit performance
degradation due to transistor aging. To extend circuit operating life, the bias of the main …

A low-power receiver front end (RFE) with 2-tap continuous time linear equalization (CTLE)
was designed in 28 nm CMOS technology. The CTLE uses a transconductance-based …

Power amplifier (PA) specifications are closely related to changes in temperature; thus, the
small-signal gain (S21) of PA decreases with the temperature increase. To compensate for …

An on-chip temperature detection and compensation for a LC-VCO based phase locked
loop is presented here. A temperature-sensitive current controlled oscillator based …

This paper presents the design methodology and simulation results of an X-band power
amplifier (PA) developed for weather radar applications. The primary goal of the PA design …

This paper presents the results of the S-band buffer amplifier design with an integrated
temperature sensor based on 180 nm CMOS technology. Existing methods of gain …

To effective use of wind energy resources in low wind region, the “vertical axis-building
block-pressure type” blade is developed. Firstly, a large rectangular frame is designed in …