In this study, the GaAs-based metal-semiconductor (MS) contact was prepared as a
reference sample for comparison with other devices in the literature, especially some …

In this study, the production and electrical characterization of Schottky circuit elements of
Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality …

Herein, a newly designed π-conjugated D-π-A type organic material, namely TPA-T-DCV 9,
was synthesized in excellent yield by introducing triphenylamine as electron donor and …

In this work, the temperature-dependent (80–360 K) dielectric properties of the Au/ZnO-
PVA/n-Si structure was investigated employing capacitance-voltage (C–V) and conductance …

In this study, the effects of illumination on the electronic and optoelectronic properties of
Al/hydroxymethyl functionalized Zn (II) Pc/p-Si/Al photonic device have been investigated …

The temperature dependence of the electrical parameters of the Au/α-Al2O3/p-Si/Al
heterojunction diode and the variation of these parameters with radiation were investigated …

In this study, ZnO micro/nanorods were grown on both glass and p-Si substrates by a simple
and applicable homemade chemical spray pyrolysis method. X-ray diffraction (XRD) and …

Schottky barrier diodes were fabricated on tetramethylammonium hydroxide (TMAH)-treated
β-Ga 2 O 3 surfaces with Ni/Au as Schottky metal contacts. TMAH wet surface treatment …

In this work, two models of artificial neural networks are developed to predict the electrical
parameters and capacitance-voltage characteristics of GaAs/AlGaAs multi-quantum wells …

In this paper, firstly, a new organic material 9 containing triphenylamine (TPA) unit as an
electron donor and diaminomaleonitrile (DAMN) unit as an electron acceptor and thiophene …