We investigate the impact of the growth conditions of AlGaAsSb cladding layers on the
properties of interband cascade lasers (ICLs). For an optimized structure emitting at 3.3 µm …

The effect of metallic contacts as well as defects and carrier recombinations on
performances of an antimonide based cell, dedicated for thermo-photovoltaic conversion, is …

We have fabricated Pd/Ge/Au/Pt/Au ohmic contacts on n-type GaSb grown by molecular
beam epitaxy. The annealed contacts show specific contact resistivities which are as low as …

Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam
epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand …

High-efficiency GaSb-based photovoltaic cells designed for conversion of high-power laser
radiation and infrared radiation of emitters heated by concentrated solar radiation are …

The transmission-line model with radial and rectangular geometry of contact pads has been
used to study the contact systems Cr-Au, Cr-Au-Ag-Au, Ti-Pt-Au, Pt-Ti-Pt-Au, Pt-Au, Ti-Au, Ti …

A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of
2.4× 10− 6 Ωcm2. The annealing temperature range over which the specific contact …

Ohmic contacts to gallium antimonide have been studied in recent years in an attempt to
develop a low-resistance, thermally stable metallization. We present a study of Pd 3 In 7∕ …

This dissertation focuses on the development of novel electrically-pumped, continuouswave
operating GaSb-based application-suited VCSELs in the wavelength range between 2.3 µm …

The Boltzmann transport equation (BTE) is applied to the problem of thermoelectric transport
in p-type semiconductors whose valence band-structure is describable in terms of two bands …