A 35 dBm PSAT and 41% PAE GaAs Power Amplifier With Series Distributed-Balun

Z Ma, Z Ma, K Ma - IEEE Transactions on Circuits and Systems …, 2022 - ieeexplore.ieee.org
This brief presents a high-power Sub-6 GHz two-way differential power amplifier (PA) with a
series distributed-balun output network in GaAs pHEMT process. The proposed series …

Analysis of a class-E power amplifier with shunt filter for any duty ratio

P Chen, K Yang, T Zhang - … on Circuits and Systems II: Express …, 2016 - ieeexplore.ieee.org
The class-E power amplifier with shunt filter, which is also known as the class-E power
amplifier with shunt capacitance and shunt filter, is proposed in this brief for any duty ratio …

Fully integrated class-J power amplifier in standard CMOS technology

Y Dong, L Mao, S Xie - IEEE Microwave and Wireless …, 2016 - ieeexplore.ieee.org
This letter discusses the integration of Class-J power amplifiers (PA). A set of modified
design equations considering harmonic losses is derived and the inductor losses are …

Analysis and design of current mode class-D power amplifiers with finite feeding inductors

M Silva-Pereira, M Assunção… - IEEE Transactions on Very …, 2020 - ieeexplore.ieee.org
Current-mode class-D (CMCD) power amplifiers (PAs) may not achieve a switching
efficiency as good as class-E PAs, but they require fewer inductances and deliver almost five …

Floating bulk cascode class-E power amplifier

AR Dehqan, S Toofan, H Lotfi - IEEE Transactions on Circuits …, 2018 - ieeexplore.ieee.org
In this brief, the switching behavior of the cascode topology is improved through the floating
bulk (FB) technique. Although the cascode structure has the advantage of reducing voltage …

'New'solutions of Class‐E power amplifier with finite dc feed inductor at any duty ratio

X Du, J Nan, W Chen, Z Shao - IET Circuits, Devices & Systems, 2014 - Wiley Online Library
'New'Class‐E solutions are proposed by varying three different design parameters which are
introduced in the voltage and current equations in order to extend the Class‐E 'design …

A 55 nm CMOS RF Transmitter Front-End with an Active Mixer and a Class-E Power Amplifier for 433 MHz ISM Band Applications

H Yuan, R Zhou, P Wang, H Xu, Y Wang - Electronics, 2023 - mdpi.com
In order to meet the increasing demands of wireless communication for ISM bands, a 433
MHz transmitter RF front-end is designed using a 55 nm low-power CMOS technology. The …

Co-design of on-chip loop antenna and differential class-E power amplifier at 2.4 GHz for biotelemetry applications

A Sunitha, B Manickam - Microelectronics Journal, 2019 - Elsevier
Degradation in gain and efficiency of on-chip antennas limit the communication range of RF
transmitters integrated with on-chip antennas below 10 GHz to few centimeters. In this …

An RF choke-less class E power amplifier

GD Singh, N Nallam - … Transactions on Circuits and Systems II …, 2020 - ieeexplore.ieee.org
An RF-choke (RFC) is a crucial but difficult-to-realize component of all Class-E power
amplifiers (PAs). A Class-DE PA does not require an RFC but requires two non-overlapping …

A class-E power amplifier with high efficiency and high power-gain for wireless sensor network

R Raja, R Theegala, B Venkataramani - Microsystem Technologies, 2017 - Springer
In the literature, a number of two-stage class-E power amplifiers have been reported for
wireless sensor network (WSN) applications. However, they suffer from the requirement of …