Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
Investigation of statistical variability in non-uniformly doped bulk junctionless FinFET
The impact of random dopant fluctuation (RDF), work function variation (WFV) and oxide
thickness fluctuation (OTF) on the statistical variability of the electrical performance of non …
thickness fluctuation (OTF) on the statistical variability of the electrical performance of non …
Junctionless FETs based on a silicon-on-insulator architecture with a buried metal fin for multi-threshold operation
In this paper, an n-channel junctionless FinFET (JL FinFET) based on a silicon-on-insulator
(SOI) architecture with a buried metal fin (BMF) is presented. We show that the BMF with a …
(SOI) architecture with a buried metal fin (BMF) is presented. We show that the BMF with a …
Junctionless Transistors: Evolution and Prospects
TR Pokhrel, A Majumder - Nanoscale Semiconductors, 2022 - api.taylorfrancis.com
Nanoscale Semiconductors; Materials, Devices and Circuits Page 1 Chapter 11 Junctionless
Transistors Evolution and Prospects Tika Ram Pokhrel and Alak Majumder CONTENTS 11.1 …
Transistors Evolution and Prospects Tika Ram Pokhrel and Alak Majumder CONTENTS 11.1 …
Junctionless FETs On Silicon-On-Insulator With Buried Metal Fin For Multi Threshold Operation
DK Singh, BC Nagar, MW Akram - 2021 - researchsquare.com
In this paper, an n-channel junctionless FET (JLFET) based on SOI with a buried metal fin
(BMF) is presented. We show that the BMF of suitable workfunction of the proposed device …
(BMF) is presented. We show that the BMF of suitable workfunction of the proposed device …