Gate-all-around (GAA) is a promising MOSFET structure to continue scaling down the size of
CMOS devices beyond 7 nm technology node. This paper gives an overview of different …

The progress in IC miniaturization dictated by Moore's Law has taken a leap from mere
circuit integration to IoT enabled System-on-Chip (SoC) deployments. Such systems are …

In this letter, we report the realization of sub-10-nm diameter vertical nanowire (VNW) p-type
tunnel FETs (TFETs). Using a broken-band GaSb/InAsSb heterostructure design and a top …

Sb-based semiconductors are critical p-channel materials for III–V complementary metal
oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide …

GaSb is considered as an attractive p-type channel material for future III-V metal-oxide-
semiconductor (MOS) technologies, but the processing conditions to utilize the full device …

This article introduces a novel double-gate (DG) p-channel MOSFET based on gallium
arsenide (GaAs), in which the source region is intrinsic and the holes are induced in this …

III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS
device performance. This letter adopts a novel quaternary InGaAsSb channel material in a …

Due to its high hole-mobility, GaSb is a highly promising candidate for high-speed p-
channels in electronic devices. However, GaSb exhibits a comparably thick native oxide …

Power dissipation has been the major challenge in the downscaling of transistor technology.
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a …

III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a
considerable reduction in gate leakage current. Following the natural transistor evolution …