GaN: Processing, defects, and devices
SJ Pearton, JC Zolper, RJ Shul, F Ren - Journal of applied physics, 1999 - pubs.aip.org
The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …
electrical and optical properties of GaN is reviewed. Recent progress in the development of …
The present status of quantum dot lasers
M Grundmann - Physica E: Low-dimensional Systems and …, 1999 - Elsevier
We review the present status of the rapidly developing field of semiconductor laser diodes
based on self-organized quantum dots (QDs). Several milestones have been achieved since …
based on self-organized quantum dots (QDs). Several milestones have been achieved since …
Surface-emitting laser-its birth and generation of new optoelectronics field
K Iga - IEEE Journal of selected topics in Quantum Electronics, 2000 - ieeexplore.ieee.org
The surface-emitting laser (SEL) is considered one of the most important devices for optical
interconnects and LANs, enabling ultra parallel information transmission in lightwave and …
interconnects and LANs, enabling ultra parallel information transmission in lightwave and …
Vertical-cavity surface-emitting laser: Its conception and evolution
K Iga - Japanese Journal of Applied Physics, 2008 - iopscience.iop.org
The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed
optical local-area networks (LANs) and even wide-area networks (WANs). This device is …
optical local-area networks (LANs) and even wide-area networks (WANs). This device is …
Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
GaAs 1− x N x alloys have unique properties among the III-V systems to simultaneously
lower both the lattice constant and the band gap. Therefore, it has a strong potential for …
lower both the lattice constant and the band gap. Therefore, it has a strong potential for …
Vertical-cavity surface-emitting laser devices
K Iga, HE Li - Cham, Switzerland: Springer, 2003 - Springer
The vertical cavity surface emitting laser (VCSEL) is a relatively new semiconductor laser
device, especially applicable to fiber-optic networks in the 21st century. About 25 years have …
device, especially applicable to fiber-optic networks in the 21st century. About 25 years have …
InGaAsN/GaAs heterojunction for multi-junction solar cells
SR Kurtz, AA Allerman, JF Klem, ED Jones - US Patent 6,252,287, 2001 - Google Patents
(57) ABSTRACT An InGaASN/GaAS Semiconductor pn heterojunction is disclosed for use in
forming a 0.95-1.2 eV bandgap photo detector with application for use in high-efficiency …
forming a 0.95-1.2 eV bandgap photo detector with application for use in high-efficiency …
Direct determination of electron effective mass in GaNAs/GaAs quantum wells
Electron effective mass (me*) in GaN x As 1− x/GaAs quantum wells (QWs) is investigated by
the optically detected cyclotron resonance technique. The me* values of 0.12 m 0 and 0.19 …
the optically detected cyclotron resonance technique. The me* values of 0.12 m 0 and 0.19 …
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
We investigate the electronic states in strained Ga 0.62 In 0.38 N 0.015 As 0.985/GaAs
multiple-quantum-well structures using photoluminescence and (polarized) …
multiple-quantum-well structures using photoluminescence and (polarized) …
Band structure of alloys and effects of pressure
ED Jones, NA Modine, AA Allerman, SR Kurtz… - Physical Review B, 1999 - APS
Abstract In x Ga 1− x As 1− y N y is a semiconductor alloy system with the remarkable
property that the inclusion of only 2% nitrogen reduces the band gap by more than 30%. In …
property that the inclusion of only 2% nitrogen reduces the band gap by more than 30%. In …