Experiment and density functional theory (DFT) are combined to study the selective growth
of Al2O3 with methanesulfonic acid (MSA) as a small molecule inhibitor (SMI) for Cu. Two …

Using both experiment and density functional theory (DFT), we study a group of small
molecule inhibitors (SMIs) and aluminum precursors to determine how the interplay between …

In recent years, area-selective deposition (ASD) processes have attracted increasing
interest in both academia and industry due to their bottom-up nature, which can simplify …

Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced
atomic layer deposition (ALD) cycles is currently being considered for bottom-up fabrication …

We investigate the blocking layer formation of the trimethoxypropylsilane small molecule
inhibitor (SMI), its blocking mechanisms, and all relevant blocking layer disintegration …

The surface chemistry of the initial growth during the first or first few precursor cycles in
atomic layer deposition is decisive for how the growth proceeds later on and thus for the …

The advanced patterning process is the basis of integration technology to realize the
development of next-generation high-speed, low-power consumption devices. Recently …

Selective deposition shows a great perspective for the downscaling of nanoelectronics. In
this work, inherently selective atomic layer deposition (ALD) of tantalum oxide was studied …

Area-selective atomic layer deposition (AS-ALD) shows great potential for meeting the
stringent demands of the semiconductor industry for precision nanopatterning. Small …

The ever-greater complexity of modern electronic devices requires a larger chemical toolbox
to support their fabrication. Here, we explore the use of 1-nitropropane as a small molecule …