Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

W Metaferia, KL Schulte, J Simon, S Johnston… - Nature …, 2019 - nature.com
We report gallium arsenide (GaAs) growth rates exceeding 300 µm h− 1 using dynamic
hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium …

Low-cost approaches to III–V semiconductor growth for photovoltaic applications

AL Greenaway, JW Boucher, SZ Oener… - ACS Energy …, 2017 - ACS Publications
III–V semiconductors form the most efficient single-and multijunction photovoltaics. Metal–
organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the …

Effect of growth temperature on GaAs solar cells at high MOCVD growth rates

KJ Schmieder, EA Armour, MP Lumb… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
Increasing epitaxial growth rate is an important path toward III-V solar cell cost reductions;
however, photovoltaic device performance has been shown to degrade with increasing …

Photovoltaic technology for Navy and Marine Corps applications

P Jenkins, R Walters - 2017 IEEE 60th International Midwest …, 2017 - ieeexplore.ieee.org
Photovoltaic (PV) technology development is dominated by the largest application, utility-
scale energy generation. Although military PV applications share some of the same …

High Performance GaAs Solar Cells Grown at High Growth Rates by Atmospheric-Pressure Dynamic Hydride Vapor Phase Epitaxy

W Metaferia, KL Schulte, J Simon… - 2019 IEEE 46th …, 2019 - ieeexplore.ieee.org
We report GaAs solar cells grown at rates exceeding 300 μm/h by atmospheric-pressure
dynamic hydride vapor phase epitaxy (D-HVPE). The surface morphology of the GaAs layers …

[引用][C] Notice of Removal: Effect of growth temperature on GaAs solar cells at high MOCVD growth rates

KJ Schmieder, EA Armour, MP Lumb… - 2017 IEEE 44th …, 2017 - ieeexplore.ieee.org
Removed.