This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a
special focus on their lattice location and on the optical activation by means of thermal …

Density functional theory is used to investigate Eu, Er, and Tm rare earth (RE) impurities in
GaN, paying particular attention to their structure, energetics, and electronic properties. The …

We report the observation of visible photoluminescence and cathodoluminescence of Eu 3+
ions implanted in GaN and Al 0.14 Ga 0.86 N/GaN superlattice. The sharp characteristic …

Electroluminescence (EL) studies of AlN: Er alternating-current thin-film electroluminescent
(ACTFEL) devices were performed at 300 K. Thin films of Er-doped AlN,∼ 200 nm thick …

This paper reports the emission analysis of green-emitting Tb3+-doped MgAl2O4
phosphors. Uniformity of the phase of the Tb3+-doped MgAl2O4 phosphor has been …

Luminescence properties of Tb3+-doped spinel crystals have been investigated at various
temperatures between 8 and 300K under excitation in the Tb3+ absorption bands and in the …

Gallium nitride (GaN) is a key material when it comes to light-emitting diodes (LEDs) and
has pushed the LED revolution in lighting and displays. The concept of down-conversion of …

A model is developed to simulate the rare earth luminescence intensity in dependence of
both the excitation rate and the dopant concentration. For low excitation rates, as in the case …

Terbium-terbium interactions in terbium doped semiconductors and insulators may lead to
the so-called cross-relaxation process, which increases the D 5 4 (green) emission of the …

We have analyzed the cathodoluminescence spectra of Sm3 ions implanted and annealed
in GaN epilayers. High-resolution emission spectra were obtained at 11 K between 350 and …