In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) and its comprehensive theoretical model is proposed to achieve high optical performance and low …
K Tamersit - IEEE Sensors Journal, 2023 - ieeexplore.ieee.org
In this article, a new asymmetric dual-gate junctionless graphene nanoribbon tunneling field- effect phototransistor (DG JL-GNRTFEP) has been proposed using a quantum simulation …
H Ferhati, F Djeffal - Sensors and Actuators A: Physical, 2021 - Elsevier
In this paper, a new InGaZnO (IGZO) thin-film UV Phototransistor (Photo-TFT) based on both dual material gate (DM) and plasmonic Ag nanoparticles (NPs) is proposed, in hope of …
In this paper, the impact of the surface-textured front glass on the absorption of TiO 2/glass thin-film ultraviolet (UV) photodetector is investigated, in order to achieve the dual role of …
H Ferhati, F Djeffal - Superlattices and Microstructures, 2017 - Elsevier
In this paper, a new MSM-UV-photodetector (PD) based on dual wide band-gap material (DM) engineering aspect is proposed to achieve high-performance self-powered device …
M Khurana, U Kardam, M Saxena… - IETE Technical …, 2023 - Taylor & Francis
In this article, a semi-analytical model for germanium absorber-based SOI-tunnel field-effect phototransistor at 1550 nm has been proposed. The model works efficiently for a wide range …
In this work, TCAD-based investigation of junctionLess (JL) architecture having double gate (DG) has been performed for visualizing the sensitivity of the device against light intensity …
In this paper, a new TiO 2-based UV photodetector including back triangular texturization morphology has been investigated numerically using accurate solutions of Maxwell's …
K Tamersit - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
In this paper, new nanoscale phototransistors based on carbon nanotube (CNT) are proposed and assessed using a quantum simulation-based computational methodology …