Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators
F Giuliano, S Reggiani, E Gnani… - … on Electron Devices, 2021 - ieeexplore.ieee.org
A TCAD approach for the investigation of charge transport in thick amorphous silicon dioxide
is presented for the first time. Thick oxides are investigated representing the best candidates …
is presented for the first time. Thick oxides are investigated representing the best candidates …
Breakdown-Voltage Degradation Under AC Stress of Thick SiO Capacitors for Galvanic Insulation
F Giuliano, S Reggiani, E Gnani… - … on Electron Devices, 2023 - ieeexplore.ieee.org
High-voltage dielectric breakdown of thick amorphous silicon-dioxide capacitors for galvanic
insulation have been recently investigated showing a significant difference under dc and ac …
insulation have been recently investigated showing a significant difference under dc and ac …
Physical modeling and numerical simulations of degradation mechanisms in devices and insulators for power applications
F Giuliano - 2023 - amsdottorato.unibo.it
In this thesis, a TCAD approach for the investigation of charge transport in amorphous
silicon dioxide is presented for the first time. The proposed approach is used to investigate …
silicon dioxide is presented for the first time. The proposed approach is used to investigate …
Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors
F Giuliano, S Reggiani, E Gnani… - … Integration on Silicon …, 2021 - ieeexplore.ieee.org
Charge transport in thick amorphous silicon dioxide capacitors for integrated galvanic
insulators is experimentally investigated and analyzed through numerical simulations …
insulators is experimentally investigated and analyzed through numerical simulations …