In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …

In this study, we have observed dynamic switching behaviors in a memristive device. There
are only a few atoms in the resistive switching reaction which enables the high-speed …

In this letter, we presented that the charge quantity is the critical factor for forming process.
Forming is a pivotal process in resistance random access memory to activate the resistance …

Owing to their small physical size and low power consumption, resistive random access
memory (RRAM) devices are potential for future memory and logic applications in …

The switching layer with Si interfusion is investigated to improve the electrical characteristics
of WO X resistance random access memory (RRAM). The WO X has attracted extensive …

Resistance random access memory (RRAM) is a great potential candidate for next-
generation nonvolatile memory due to the outstanding memory characteristic. However, the …

In this study, the hopping conduction distance variation of Zn: SiO 2 resistance random
access memory (RRAM) devices with different operating compliance currents was discussed …

This paper reports the bipolar resistive switching characteristics of TaN x-based resistive
random access memory (ReRAM). The conduction mechanism is explained by formation …

High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs)
are demonstrated using excimer laser crystallization to control the locations of grain …

After high-temperature forming (HTF) and room-temperature forming treatments, the resistive
switching behavior gets some improvements. The switching ratio is enhanced as the device …