This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

We present a combined theoretical and experimental study of the ferromagnetic
semiconductor (G a, M n) A s which explains the remarkably large changes observed on low …

We study the influence of the major compensating defects As antisites and Mn interstitials
known to occur in the GaMnAs ferromagnetic semiconductor on its structural properties. Our …

The annealing effects on the microstructure and magnetic properties of Zn 0.92 Co 0.08 O
films annealed at different temperatures (200, 400 and 600 C) in air and vacuum have been …

We have studied the effects of capping ferromagnetic Ga 1− x Mn x As epilayers with a thin
layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant …

In situ postgrowth annealing of (Ga, Mn) As layers under As capping is adequate for
achieving high Curie temperatures (TC) in a similar way as ex situ annealing in air or in N 2 …

The magnetization and hole distribution of Mn clusters in (Ga, Mn) As are investigated by all-
electron total energy calculations using the projector augmented wave method within the …

Ga 1− x Mn x As films with exceptionally high saturation magnetizations of≈ 100 emu/cm 3
corresponding to effective Mn concentrations of xeff≈ 0.10 still have a Curie temperature TC …

When Richard Feynman boldly speculated in 1959 about the technological possibilities
latent in the manipulation of “quantized energy levels, or the interactions of quantized spins …

We study a model thin film containing diluted bilayer structure with the Ruderman-Kittel-
Kasuya-Yosida long-range interaction. The magnetic subsystem is composed of two …