Abstract The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for
coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is …

Narrow gap semiconductors obey the general rules of semiconductor science, but often
exhibit extreme features of these rules because of the same properties that produce their …

This paper demonstrates that thermal energy radiated from a human finger can be converted
efficiently into electricity by a nanocrystal (NC) thin film that substantially suppresses thermal …

Magnetotransport and magneto-optical measurements on InxGa1xAs/InyAl1yAs modulation-
doped strained double quantum wells with a 100 Å In0. 8Ga0. 2As well and a 100 Å In0 …

The variations in the electronic properties of the two-dimensional electron gas (2DEG) in Al x
Ga 1− x N∕ GaN heterostructures due to an AlN embedded spacer layer were investigated …

We report on detailed carrier transport and optical properties in doped/undoped GaAs far-
infrared (FIR)/terahertz (THz) mirror structures for GaAs-based FIR/THz device application …

Shubnikov–de Haas (SdH), Van der Pauw Hall-effect, and cyclotron resonance
measurements on InxGa1xAs/In0. 52Al0. 48As asymmetric step quantum wells were carried …

Shubnikov-de Haas and Van der Pauw Hall effect measurements at 1.5 K have been carried
out to investigate the existence of a two-dimensional electron gas and to determine subband …

The determination of the effective mass of the two-dimensional electron gas (2DEG) and
nonparabolicity effects in modulation-doped In0. 65Ga0. 35As/In0. 52Al0. 48As single …

Shubnikov–de Haas (SdH) and van der Pauw Hall effect measurements on In0. 52Al0.
48As/In x Ga1− x As coupled double quantum wells grown by metalorganic chemical vapor …