Design of nitride semiconductors for solar energy conversion

A Zakutayev - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
Nitride semiconductors are a promising class of materials for solar energy conversion
applications, such as photovoltaic and photoelectrochemical cells. Nitrides can have better …

InGaN solar cells: present state of the art and important challenges

AG Bhuiyan, K Sugita, A Hashimoto… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
Solar cells are a promising renewable and carbon-free electric energy resource to address
the fossil-fuel shortage and global warming. Energy conversion efficiencies over 40% have …

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

PG Moses, M Miao, Q Yan… - The Journal of chemical …, 2011 - pubs.aip.org
; 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In
content is calculated and a strong bowing at low In content is found, described by bowing …

High internal and external quantum efficiency InGaN/GaN solar cells

E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji… - Applied Physics …, 2011 - pubs.aip.org
High internal and external quantum efficiency GaN/InGaN solar cells are demonstrated. The
internal quantum efficiency was assessed through the combination of absorption and …

Finite element simulations of compositionally graded InGaN solar cells

GF Brown, JW Ager III, W Walukiewicz, J Wu - Solar Energy Materials and …, 2010 - Elsevier
The solar power conversion efficiency of compositionally graded InxGa1− xN solar cells was
simulated using a finite element approach. Incorporating a compositionally graded region on …

III-nitrides for energy production: photovoltaic and thermoelectric applications

N Lu, I Ferguson - Semiconductor Science and Technology, 2013 - iopscience.iop.org
In this review article, we discuss the recent advances in the III-nitrides, in particular GaN and
its ternary alloys, for photovoltaic and thermoelectric devices. The advantages of using the III …

Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting

R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …

Fabrication and characterization of InGaN pin homojunction solar cell

X Cai, S Zeng, B Zhang - Applied Physics Letters, 2009 - pubs.aip.org
In x Ga 1-x N pin homojunction solar cells with different In content are studied. The
measured open circuit voltages (V oc) are 2.24, 1.34, and 0.96 V, for x= 0.02⁠, 0.12, and …

Progress in indium gallium nitride materials for solar photovoltaic energy conversion

DVP McLaughlin, JM Pearce - Metallurgical and Materials Transactions A, 2013 - Springer
The world requires inexpensive, reliable, and sustainable energy sources. Solar
photovoltaic (PV) technology, which converts sunlight directly into electricity, is an …

Effects of polarization charge on the photovoltaic properties of InGaN solar cells

ZQ Li, M Lestradet, YG Xiao, S Li - physica status solidi (a), 2011 - Wiley Online Library
The effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN
solar cells have been analyzed in detail using 2D drift‐diffusion simulations. The …