Applications of chalcogenide glasses in electronics and optoelectronics: a review
N Mehta - 2006 - nopr.niscpr.res.in
Following the development of the glassy chalcogenide field, new optoelectronic materials
based on these materials have been discovered. Several non-oxide glasses have been …
based on these materials have been discovered. Several non-oxide glasses have been …
[PDF][PDF] Electrical and optical properties of amorphous PbxIn25-xSe75 films with a dispersion of nanocrystallites
AK Pattanaik, A Srinivasan - Journal of Optoelectronics and …, 2003 - old.joam.inoe.ro
Prior to the pioneering work by Tohge et al. which demonstrated that majority charge carrier
reversal (MCCR) could be realized in bulk (p-type) amorphous germanium selenide with the …
reversal (MCCR) could be realized in bulk (p-type) amorphous germanium selenide with the …
Calorimetric studies of bulk Se-Te-Pb glassy system
MS Kamboj, R Thangaraj - The European Physical Journal-Applied …, 2003 - cambridge.org
Calorimetric studies have been performed on the Se Te20 Pbx () samples at different
heating rates (5− 20° C/min). The glass transition temperature Tg, the peak crystallization …
heating rates (5− 20° C/min). The glass transition temperature Tg, the peak crystallization …
On the Dielectric Study of Se80−x Te20Pb x (x = 0, 1 and 2) Glasses
In the present paper, the dielectric parameters such as the dielectric constant ε′(ω),
dielectric loss ε ″(ω) and alternating current (ac) conductivity have been investigated for …
dielectric loss ε ″(ω) and alternating current (ac) conductivity have been investigated for …
Correlation of some opto-electrical properties of Se–Te–Sn glassy semiconductors with the average single bond energy and the average electronegativity
OA Lafi - Journal of Alloys and Compounds, 2016 - Elsevier
Studies of some electrical and optical properties of Se 90 Te 10− x Sn x (x= 2, 4, 6 and 8)
glassy alloys, in bulk and thin film forms, were performed at room temperature. Pellets of a …
glassy alloys, in bulk and thin film forms, were performed at room temperature. Pellets of a …
On high-field conduction and I–V measurements in quaternary Se–Te–In–Pb nano-chalcogenide thin films
In this paper, multi-component Se 79-x Te 15 In 6 Pb x (x= 0, 1, 2, 4, 6, 8, and 10 at. wt.%)
nano-chalcogenide alloys were prepared by using melt quenching technique and their …
nano-chalcogenide alloys were prepared by using melt quenching technique and their …
Pre-exponential factor ina-Se75In25-x Pb x thin films
Temperature dependence of dc conductivity is studied in a-Se 75 In 25-x Pb x thin films
where x is varied from 0–10. From these measurements, the values of the pre-exponential …
where x is varied from 0–10. From these measurements, the values of the pre-exponential …
Investigation of switching phenomenon of Se75Te25− xGax amorphous system
Thin film samples of different thicknesses ranging from 185 to 630 nm, were prepared from
the synthesized amorphous Se 75 Te 25− x Ga x (0≤ x≤ 15 at.%) chalcogenide glass …
the synthesized amorphous Se 75 Te 25− x Ga x (0≤ x≤ 15 at.%) chalcogenide glass …
IV measurements of Ge-Se-Sn chalcogenide glassy alloys
V Kumari, A Kaswan, D Patidar, NS Saxena… - … and Application of …, 2015 - doiserbia.nb.rs
Current-voltage characteristics and DC electrical conductivity were studied for Ge30-
xSe70Snx (x= 8, 11, 14, 17 and 20) glassy thin pellets of diameter 12mm and thickness 1mm …
xSe70Snx (x= 8, 11, 14, 17 and 20) glassy thin pellets of diameter 12mm and thickness 1mm …
Role of Sn in the density of defect states in a-Se_ {0.75} Te_ {0.25} and a-Se_ {0.85} Te_ {0.15} thin films
In this paper we report the effect of Sn incorporation in the density of defect states of two
binary Se-Te glassy systems, comparing the properties of a-Se_ {0.75} Te_ {0.25}, a-Se …
binary Se-Te glassy systems, comparing the properties of a-Se_ {0.75} Te_ {0.25}, a-Se …