Soft eSkin: distributed touch sensing with harmonized energy and computing

M Soni, R Dahiya - … Transactions of the Royal Society A, 2020 - royalsocietypublishing.org
Inspired by biology, significant advances have been made in the field of electronic skin
(eSkin) or tactile skin. Many of these advances have come through mimicking the …

Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications

S Choudhary, M Soni, SK Sharma - Semiconductor Science and …, 2019 - iopscience.iop.org
Emerging information technology and data deluge foster the unprecedented demands of
higher chip density, clocking speed, data storage and lower power dissipation for on-chip …

Printed High-k Dielectric for Flexible Low-Power Extended Gate Field-Effect Transistor in Sensing Pressure

QJ Sun, T Li, W Wu, S Venkatesh… - ACS Applied …, 2019 - ACS Publications
Recently, flexible organic field-effect transistor (OFET)-based pressure sensors have been
attracting significant interest for promising applications in electronic skin (e-skin) and …

Reprogrammable reflection-transmission integrated coding metasurface for real-time terahertz wavefront manipulations in full-space

P Farzin, AS Nooramin, M Soleimani - Scientific Reports, 2024 - nature.com
In recent years, there has been notable advancement in programmable metasurfaces,
primarily attributed to their cost-effectiveness and capacity to manipulate electromagnetic …

Flexible interfaces between reduced graphene oxide and indium tin oxide/polyethylene terephthalate for advanced optoelectronic devices

AG Marrani, AC Coico, D Giacco… - ACS Applied Nano …, 2019 - ACS Publications
Integration of graphene on flexible and transparent supports, such as ITO/PET, represents a
challenging goal for the realization of next-generation optoelectronic materials. In this …

Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure

YS Song, T Jang, KK Min, MH Baek, J Yu… - Japanese Journal of …, 2020 - iopscience.iop.org
In this paper, we demonstrate retention improvement in nonvolatile charge-trapping memory
cells by tunneling oxide engineering with Al 2 O 3. By utilizing SiO 2/Al 2 O 3/SiO 2 layers for …

NrGO Floating Gate/SiOXNY Tunneling Layer Stack for Nonvolatile Flash Memory Applications

M Soni, A Soni, SK Sharma - IEEE Transactions on Device and …, 2020 - ieeexplore.ieee.org
This paper presents an ultra-thin silicon oxynitride (SiO XNY, 4 nm) tunneling layer, nitrogen
functionalized reduced graphene oxide (NrGO, 3-5 layer) floating gate (FG) and poly (methyl …

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

P Gupta, R Kumar, SK Sharma - Advanced Electronic Materials, 2021 - Wiley Online Library
The suitability of metal‐organic frameworks (MOFs) as functional materials for future
electronic logic devices with desirable dielectric constant, bandgap, high‐quality interface …

Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene …

EK Hong, KE Park, S Ohmi - IEICE Transactions on Electronics, 2022 - search.ieice.org
In this research, the effect of Ar/N 2-plasma sputtering gas pressure on the LaB x N y tunnel
and block layer was investigated for pentacene-based floating-gate memory with an …

Soft eSkin

M Soni, R Dahiya - Philosophical Transactions: Mathematical, Physical …, 2020 - JSTOR
Inspired by biology, significant advances have been made in the field of electronic skin
(eSkin) or tactile skin. Many of these advances have come through mimicking the …