Semi oblate and semi prolate are among the most probable self-organized nanostructures
shapes. The optoelectronic properties of such nanostructures are not just manipulated with …

We have studied the parallel and perpendicular electric field effects on the system of SiGe
prolate and oblate quantum dots numerically, taking into account the wetting layer and …

The onset of impact ionization-induced instabilities limits the operative range of SiGe hetero-
junction bipolar transistors. Based on referential Monte Carlo simulation results, a critical …

Advanced 3-D thermal simulations of state-of-the-art SiGe: C HBTs are performed, which
ensure improved accuracy with respect to conventional approaches. The whole back-end-of …

A very detailed investigation of high-speed silicon–germanium (SiGe) heterojunction bipolar
transistors (HBTs) showed an underestimation of the measured peak cutoff frequency by …

The latest development of Silicon-Germanium (SiGe) HBTs has clearly demonstrated that
the standard drift-diffusion model is not capable to predict the device performance. Thus …

Analytical Models of Effective DOS, Saturation Velocity and High-Field Mobility for SiGe HBTs
Numerical Simulation Page 1 Analytical Models of Effective DOS, Saturation Velocity and …

The ability of state-of-the-art TCAD simulation to predict the performance of SiGe HBTs with
advanced vertical doping profiles is evaluated by a comparison of simulation and …

3-D thermal analyses of state-of-the-art silicon-germanium heterojunction bipolar transistors
are performed with the aim of improving the simulation accuracy with respect to conventional …

We have investigated the effect of temperature and geometrical confinement on the behavior
of spherical cavities with Yukawa potential presence inside the cavity within effective mass …