Several industrial applications require specific electronic systems installed in harsh
environments to perform measurements, monitoring, and control tasks such as in space …

" Extreme environments" represents an important niche market for electronics and spans the
operation of electronic components in surroundings lying outside the domain of …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …

A new mixed-mode base current degradation mechanism is identified in bipolar transistors
for the first time, which, at room temperature, induces a large I/sub B/leakage current only …

We review the emerging reliability issues associated with high-performance SiGe HBT
technologies which are being increasingly deployed in a wide variety of mixed-signal circuit …

The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are
investigated. Laser testing and simulations indicate that ion strikes on critical transistors …

This paper presents the first investigation of the physical origins of the observed variable
proton tolerance in multiple SiGe HBT BiCMOS technology generations. We use the …

The impact of semiconductor process scaling on the overall transient response of SiGe
BiCMOS platforms is investigated. Pulsed-laser two-photon absorption (TPA) and heavyion …

We present a wideband, low noise amplifier (LNA) implemented in a Silicon-Germanium
Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA covers a frequency …