In this paper, different modeling approaches to the drain current, including analytical and
artificial neural network (ANN) modeling, are investigated. The adopted models address the …

In this paper, new modeling and optimization approaches are proposed to improve the
electrical behavior of the submicron Dual-Material-gate (DM) Gallium Arsenide (GaAs) …

A comparison of nine different nonlinear I–V models for the simulation of submicron GaAs
MESFET dc characteristics has been made. Drain-to-source current, Ids as a function of gate …

In this paper, a novel extended-temperature current–voltage (IV) model for Gallium Nitride
(GaN) high electron mobility transistors (HEMT) devices is proposed. Revised from the …

In this paper, a novel eight-parameter empirical nonlinear current-voltage (IV) model for
gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A hyperbolic …

This paper presents a new symmetrical field-effect transistor (FET) model suitable for
microwave switches. The model takes advantage of the inherent symmetry of typical switch …

GaN High Electron Mobility Transistors (HEMTs) is a high-power device that requires
electrothermal modeling for the drain current. The accuracy of the large signal device …

Bearing in mind the requirements of design engineers, a nonlinear model is developed to
simulate the temperature-dependent I–V characteristics of submicron high-electron-mobility …

We present an approach of GaAs MESFET incorporating the gate engineering effect to
improve immunity against the short channel effects in order to enhance the scaling capability …

An enhanced SPICE model for Silicon Carbide (SiC) MOSFETs designed to match these
devices' current-voltage characteristics precisely is proposed in this study. Compared to …