(57) ABSTRACT A semiconductor includes a first transistor and a second transistor. The first
transistor includes a first and a second epitaxial layer, formed of a first semiconductor …

A semiconductor includes a first transistor and a second transistor. The first transistor
includes a first and a second epitaxial layer, formed of a first semiconductor material. The …

Provided is a nanosheet semiconductor device. In embodi ments of the invention, the
nanosheet semiconductor device includes a channel nanosheet formed over a substrate …

US10414978B2 - Etching composition and method for fabricating semiconductor device by
using the same - Google Patents US10414978B2 - Etching composition and method for …

Provided is a nanosheet semiconductor device. In embodiments of the invention, the
nanosheet semiconductor device includes a channel nanosheet formed over a substrate …

The present disclosure is directed to etching compositions that are useful for, eg, selectively
removing silicon germa nium (SiGe) from a semiconductor substrate as an interme diate …

An SOI substrate and a method for forming the SOI substrate are provided. An SOI substrate
can be formed by forming a silicon-germanium layer on a first baseplate. A top silicon layer …

US11124704B2 - Etching compositions - Google Patents US11124704B2 - Etching
compositions - Google Patents Etching compositions Download PDF Info Publication …

(57) ABSTRACT A substrate used for fabricating devices thereon includes an insulating film,
and a monocrystal Gethin layerformed on the insulating film in contact therewith, the …

US10793775B2 - Etching composition and method for fabricating semiconductor device by
using the same - Google Patents US10793775B2 - Etching composition and method for …