Present and future of terahertz communications
HJ Song, T Nagatsuma - IEEE transactions on terahertz science …, 2011 - ieeexplore.ieee.org
Recent changes in how people consume multimedia services are causing an explosive
increase in mobile traffic. With more and more people using wireless networks, the demand …
increase in mobile traffic. With more and more people using wireless networks, the demand …
Emerging terahertz integrated systems in silicon
Silicon-based terahertz (THz) integrated circuits (ICs) have made rapid progress over the
past decade. The demonstrated basic component performance, as well as the maturity of …
past decade. The demonstrated basic component performance, as well as the maturity of …
The last barrier: on-chip antennas
This paper has presented a comprehensive overview of on-chip antennas, which remain the
last bottleneck for achieving true SoC RF solutions. CMOS remains the mainstream IC …
last bottleneck for achieving true SoC RF solutions. CMOS remains the mainstream IC …
[图书][B] Handbook of terahertz technologies: devices and applications
HJ Song, T Nagatsuma - 2015 - books.google.com
Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been
investigated in a few limited fields, such as astronomy, because of a lack of devices for their …
investigated in a few limited fields, such as astronomy, because of a lack of devices for their …
A 58–65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply
WL Chan, JR Long - IEEE journal of solid-state circuits, 2010 - ieeexplore.ieee.org
A 60-GHz band, three-stage pseudo-differential power amplifier (PA) is implemented with
input and output baluns on-chip. Each stage consists of a neutralized common-source …
input and output baluns on-chip. Each stage consists of a neutralized common-source …
Active terahertz imaging using Schottky diodes in CMOS: Array and 860-GHz pixel
R Han, Y Zhang, Y Kim, DY Kim… - IEEE Journal of Solid …, 2013 - ieeexplore.ieee.org
Schottky-barrier diodes (SBD's) fabricated in CMOS without process modification are shown
to be suitable for active THz imaging applications. Using a compact passive-pixel array …
to be suitable for active THz imaging applications. Using a compact passive-pixel array …
A 280-GHz Schottky diode detector in 130-nm digital CMOS
R Han, Y Zhang, D Coquillat, H Videlier… - IEEE Journal of Solid …, 2011 - ieeexplore.ieee.org
A 2× 2 array of 280-GHz Schottky-barrier diode detectors with an on-chip patch antenna
(255× 250 μm 2) is fabricated in a 130-nm logic CMOS process. The series resistance of …
(255× 250 μm 2) is fabricated in a 130-nm logic CMOS process. The series resistance of …
Progress and challenges towards terahertz CMOS integrated circuits
E Seok, D Shim, C Mao, R Han… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
Key components of systems operating at high millimeter wave and sub-millimeter
wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled oscillator …
wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled oscillator …
Compact and low-profile on-chip antenna using underside electromagnetic coupling mechanism for terahertz front-end transceivers
M Alibakhshikenari, BS Virdee, AA Althuwayb… - Electronics, 2021 - mdpi.com
The results presented in this paper show that by employing a combination of metasurface
and substrate integrated waveguide (SIW) technologies, we can realize a compact and low …
and substrate integrated waveguide (SIW) technologies, we can realize a compact and low …
280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13 μm digital CMOS
R Han, Y Zhang, Y Kim, DY Kim… - … Solid-State Circuits …, 2012 - ieeexplore.ieee.org
Millimeter and sub-millimeter-wave imaging using solid-state circuits is gaining attention for
security and medical applications. To lower cost and increase integration, MOSFETs in …
security and medical applications. To lower cost and increase integration, MOSFETs in …