High‐Quality Plasmonic Materials TiN and ZnO: Al by Atomic Layer Deposition

N Izyumskaya, D Fomra, K Ding… - physica status solidi …, 2021 - Wiley Online Library
Electromagnetic radiation when coupled to collective oscillations of free electrons, dubbed
as plasmonics, makes it possible to manipulate light at dimensions well below the diffraction …

Al: ZnO as a platform for near-zero-index photonics: enhancing the doping efficiency of atomic layer deposition

D Fomra, K Ding, V Avrutin, Ü Özgür… - Optical Materials …, 2020 - opg.optica.org
Major technological breakthroughs are often driven by advancements in materials research,
and optics is no different. Over the last few years, near-zero-index (NZI) materials have …

A revised growth model for transparent conducting Ga doped ZnO films: Improving crystallinity by means of buffer layers

A Abduev, A Akmedov, A Asvarov… - Plasma Processes and …, 2015 - Wiley Online Library
Ga‐doped ZnO (GZO) thin films are recently raising both scientific and industrial interests,
due to the lack of natural resources. Indium is a crucial raw material, due to ITO modern …

Homogeneous transparent conductive ZnO: Ga by ALD for large LED wafers

Z Szabó, Z Baji, P Basa, Z Czigány, I Bársony… - Applied Surface …, 2016 - Elsevier
Highly conductive and uniform Ga doped ZnO (GZO) films were prepared by atomic layer
deposition (ALD) as transparent conductive layers for InGaN/GaN LEDs. The optimal Ga …

Electron concentration dependence of optical band gap shift in Ga-doped ZnO thin films by magnetron sputtering

Y Wang, W Tang, L Zhang, J Zhao - Thin Solid Films, 2014 - Elsevier
Ga-doped ZnO (GZO) thin films were deposited on glass substrates by a radio frequency
magnetron sputtering technique. The optical properties of the deposited GZO films were …

Highly conducting gallium-doped ZnO thin film as transparent schottky contact for organic-semiconductor-based schottky diodes

B Singh, S Ghosh - Journal of Electronic Materials, 2015 - Springer
Highly conducting and transparent Ga-doped ZnO (GZO) thin films have been grown on
transparent substrates at different growth temperatures with Ga content varying from 0.01 …

Defects in highly conductive ZnO for transparent electrodes and plasmonics

DC Look, KD Leedy, DB Thomson… - Journal of Applied Physics, 2014 - pubs.aip.org
The effects of point and extended defects on concentration n and mobility μ are studied in
thin films of Ga-doped ZnO (GZO) grown by pulsed laser deposition on quartz or ZnO itself …

Influence of polarity inversion on the electrical properties of Ga‐doped ZnO thin films

L Nulhakim, H Makino - physica status solidi (RRL)–Rapid …, 2016 - Wiley Online Library
This study investigates how polarity inversion influences the relationship between the
electrical properties of heavily Ga‐doped ZnO (GZO) films deposited by RF magnetron …

Defect analysis by transmission electron microscopy of epitaxial Al-doped ZnO films grown on (0001) ZnO and a-sapphire by RF magnetron sputtering

M Rengachari, A Bikowski, K Ellmer - Journal of Applied Physics, 2016 - pubs.aip.org
Microstructural investigations by cross section Transmission Electron Microscopy have been
carried out on Al-doped ZnO films epitaxially grown on (0001) ZnO and a-sapphire by RF …

Free‐electron concentration and polarity inversion domains in plasmonic (Zn, Ga) O

S Sadofev, S Kalusniak, P Schäfer… - … status solidi (b), 2015 - Wiley Online Library
Abstract Heavily Ga‐doped ZnO layers are grown on bulk ZnO wafers by molecular beam
epitaxy. The layers grow in a two‐dimensional pseudomorphic mode with high structural …