Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

The compositional dependence of the fundamental bandgap of pseudomorphic GaAs 1− x
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …

Band gap alignment in GaAs 1− x Bi x/GaAs quantum wells (QWs) was studied
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …

Abstract 100 nm thick GaAsBi layers were grown at a range of temperatures using both As 2
and As 4. Measurements of Bi incorporation based on room temperature …

A comprehensive assessment of the nature of the distribution of sub band-gap energy states
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …

GaAs/GaAsBi coaxial multishell nanowires were grown by molecular beam epitaxy.
Introducing Bi results in a characteristic nanowire surface morphology with strong …

GaAsBi light emitting diodes containing∼ 6% Bi are grown on GaAs substrates. Good room‐
temperature electroluminescence spectra are obtained at current densities as low as 8 …

The effect of growth conditions on the electronic properties of GaAs 1− x Bi x grown on GaAs
by molecular beam epitaxy has been investigated by means of temperature dependent …

A series of GaAsBi/GaAs multiple quantum well p–i–n diodes were grown by molecular
beam epitaxy. Nomarski images showed evidence of sub-surface damage in each diode …

Band-tail states in semiconductors reflect the effects of material growth and/or treatment,
affect the performance of optoelectronic applications, and are hence a well-concerned issue …