Particle detectors were made using semiconductor epitaxial 4H–SiC as the detection
medium. The investigated detectors are formed by Schottky contact (Au) on the epitaxial …

Issues related to the production of radiation defects in silicon carbide of various polytypes
and with differing conductivity types and concentrations of charge carriers as a result of …

Abstract Electron-paramagnetic-resonance (EPR) and electron-spin-echo (ESE) studies
have been performed that show that isolated V Si−, V Si 0, and VC vacancies are the …

Некоторые аспекты взаимодействия различных ядерных излучений с твердыми
телами с целью изучения их свойств рассматривались еще в начале прошлого …

A cluster calculation of hyperfine coupling constants based on density functional theory
(DFT) has been performed for the carbon⟨ 100⟩ split interstitial (V C+ 2C) in various charge …

Particles detectors were made using semiconductor epitaxial 4H-SiC as the detection
medium. The investigated detectors are formed by Schottky contact (Au) on the epitaxial …

Electron paramagnetic resonance (EPR) was used to study the annealing behavior of the
positively charged carbon vacancy (⁠ EI 5 center) in electron-irradiated 4 H-SiC⁠. At∼ 1000 …

The effects of proton irradiation on the static (dc) and dynamic (switching) performance of
high-voltage 4H-SiC Junction Barrier Schottky (JBS) diodes are investigated for the first time …

From the temperature dependence of the hole concentration p (T) in a lightly Al-doped 4H-
SiC epilayer, an Al acceptor with∼ 200 meV and an unknown defect with∼ 370 meV are …

The K y 1, K y 2, and K y 3 centers are the dominant defects produced in the electron-
irradiated p-type 6 H-Si C crystals. The electron paramagnetic resonance study of these …