Field-programmable LNAs with interferer-reflecting loop for input linearity enhancement

J Zhu, H Krishnaswamy… - IEEE Journal of Solid-State …, 2014 - ieeexplore.ieee.org
A field-programmable (FP) low-noise amplifier (LNA) with interferer-reflecting (IR) loop is
introduced. The user can program its gain, noise figure, linearity and power consumption …

Circuits for low noise amplifiers with interferer reflecting loops

J Zhu, PR Kinget, H Krishnaswamy - US Patent 9,954,497, 2018 - Google Patents
Circuits for low noise amplifiers with interferer reflecting loops are provided. In some
embodiments, circuits for a low noise amplifier with an interferer reflecting loop are provided …

Design of CMOS based reconfigurable LNA at millimeter wave frequency using active load

B Vinod, K Balamurugan… - 2014 IEEE International …, 2014 - ieeexplore.ieee.org
Due to increased commercial and scientific applications in millimeter wave (mm wave) band,
the development of mm wave transceivers is considered as prominent phase in RFIC design …

A 0.9 V, 4.57 mW UWB LNA with improved gain and low power consumption for 3.1–10.6 GHz ultra-wide band applications

S Pandey, T Gawande, PN Kondekar - Wireless Personal Communications, 2017 - Springer
In this paper, we present a 0.9 V, 4.57 mW UWB LNA with improved gain and low power
consumption for 3.1–10.6 GHz ultra-wide band applications. In its input stage, a common …

A digitally-controlled seven-state X-band SiGe variable gain low noise amplifier

RL Schmid, JD Cressler - 2014 IEEE Bipolar/BiCMOS Circuits …, 2014 - ieeexplore.ieee.org
This work describes the design of a digitally-controlled seven-state variable gain low noise
amplifier. The amplifier utilizes separately biased transistor cores to activate additional …

Silicon Germanium BiCMOS Integrated Circuits for Scalable Cryogenic Sensing Applications

M Hosseini - 2022 - scholarworks.umass.edu
This dissertation is focused on an investigation of BiCMOS cryogenic low noise amplifiers
(LNAs) based on Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for …

A Compact 4~ 8 GHz Low Noise Amplifier MMIC with Standing-By Feature for 5G Communication Applications

Y Xiong, X Zeng, G Wang, C Liu - 2019 3rd International …, 2019 - ieeexplore.ieee.org
This paper presents a compact 4~ 8 GHz low noise amplifier monolithic microwave
integrated circuit with standing-by feature for 5G communication applications. A two-stage …

A High Gain, High IIP3, Perfect Input Matching, Programmable Gain LNA in CMOS Technology

A Tajik, SAS TaheriNasab… - 2021 29th Iranian …, 2021 - ieeexplore.ieee.org
This paper presents A CMOS Gain Controllable Low Noise Amplifire (LNA) in TSMC 180nm
process. A gain control circuit is exploited and added in the first stage of a folded cascode …

Circuits and methods for detecting interferers

PR Kinget, J Wright, RT Yazicigil - US Patent 10,122,396, 2018 - Google Patents
Mechanisms for interferer detection can detect interferers by detecting elevated signal
amplitudes in one or more of a plurality of bins (or bands) in a frequency range between a …

A 2.3/3.3-GHz Dual Band Low Noise Amplifier Using Switchable Load Inductor in 0.18-um CMOS Technology

TA Kurniawan, HC Chen - Makara Journal of Technology, 2018 - scholarhub.ui.ac.id
In this paper, the dual band low noise amplifier is designed in 0.18-μm CMOS technology.
By combining the proposed switchable load inductor for gain controlling and the …