In the past few years, tremendous progress has been demonstrated on epitaxial growth and
processing of group III nitride nano‐and microrods (NAMs). This has also enabled the …

Local dot-like emissions in InGaN/GaN-based light-emitting diodes under both forward and
reverse biases are investigated by carefully examining their locations and …

Defect behaviors in the degradation of AlGaN-based UV-C light emitting diodes (LEDs)
under constant current stress have been intensively investigated in this work. It is found that …

Herein, how the macroscopic characterizations can be utilized to extract information on the
defect level and crystal quality of the epitaxial layers of the light‐emitting diodes (LEDs) is …

GaN and InGaN are prototypical wide band-gap semiconductors with application in light-
emitting diodes, photo-detectors, high-power electronics, photonics, and opto-electronics …

We report the influence of zigzag-shaped quantum well in green GaN-based light-emitting
diode. Our analysis shows that the droop onset, efficiency droop, internal quantum …

We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak
emission wavelength of 649 nm and investigated their electroluminescence (EL) properties …

Abstract Green light emitting InGaN/GaN multiple-quantum-well (MQW) structures with
varying well thickness are grown via metal-organic chemical vapor deposition (MOCVD) …

We investigate the spatial variation of the external quantum efficiency (EQE) of InGaN light-
emitting diodes. Two different types of EQE droop are examined in one single device …

The trap behavior of the optical power (OP) fluctuation in the degradation of deep ultraviolet
light-emitting diodes (DUV-LEDs) is investigated in this work. The OP fluctuation under …