Graphene is the first engineering electronic material, which is purely two-dimensional: it
consists of two exposed sp 2-hybridized carbon surfaces and has no bulk. Therefore …

The fabrication of high aspect ratio Si trenches has been becoming difficult due to the
decrease in critical dimension (CD) to deep nanoscale. Especially, aspect ratio dependent …

Radio frequency inductively coupled plasma sources are widely used in low temperature
industrial processing. Recent computer simulations and experiments indicate significant …

Energy distribution and the flux of the ions coming on a surface are considered as the key-
parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) …

Pulsed rf plasmas exhibit many differences as compared to continuous wave plasmas with
the same average power levels, including large temporal variations in the electron …

Comparisons between measurements and spatially-averaged (0D) simulations of low-
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …

The pulsed inductively coupled plasma (ICP) has considerable potential to satisfy multiple
stringent scaling requirements for use in the semiconductor industry. However, overshoot of …

Thermal and PECVD deposited silicon dioxide and organosilicate low-k materials with
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …

Since graphene and other 2D materials have no bulk, a major issue is their sensitivity to
surface contaminations, and the development of cleaning processes is mandatory. High …

The low-pressure pulsed plasma is a crucial tool for the construction of materials in the form
of coatings with variable properties. The pulsed mode is characterized by many parameters …