The first successful pseudomorphic Ge x Si 1-x strained layers on Si were grown in Germany
in 1975. The extensive work that has been done on the production, properties and …

An easy and reliable method to extract the crystalline fractions in microcrystalline films is
proposed. The method is shown to overcome, in a natural way, the inconsistencies that arise …

This paper reviews recent research upon the application of Raman microscopy to the
characterisation of silicon carbide monofilaments produced by CVD (chemical vapour …

The intensity of the Raman-active Γ 25'mode of nanometer-sized crystalline silicon, nc-Si,
normalized to that of calcium fluoride, CaF 2, at 322 cm− 1 was measured for samples …

The present article gives a summary of recent technological and scientific developments in
the field of polycrystalline silicon (poly-Si) thin-film solar cells on foreign substrates. Cost …

A modified one-phonon confinement model is developed for the calculation of micro-Raman
spectra in Si nanocrystals, permitting the simultaneous determination of the Raman …

High spatial frequency laser induced periodic surface structures (HSFLs) on silicon
substrates are often developed on flat surfaces at low fluences near ablation threshold of 0.1 …

This paper is a review of the catalytic chemical vapor deposition (Cat-CVD) method and
properties of silicon-based thin films, such as amorphous-silicon (a-Si), polycrystalline …

The growth of Ge microcrystals in SiO 2-Ge mixture films prepared by an rf co-sputtering
method was studied by Raman spectroscopy and electron microscopy. It was found that in …

Metal parts produced by Additive Manufacturing, and in particular Laser Powder Bed Fusion
(LPBF), suffer from residual stresses due to high thermal gradients causing cyclic expansion …