A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS
D Zhao, P Reynaert - IEEE Journal of Solid-State Circuits, 2013 - ieeexplore.ieee.org
A 60-GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology.
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
A 58–65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply
WL Chan, JR Long - IEEE journal of solid-state circuits, 2010 - ieeexplore.ieee.org
A 60-GHz band, three-stage pseudo-differential power amplifier (PA) is implemented with
input and output baluns on-chip. Each stage consists of a neutralized common-source …
input and output baluns on-chip. Each stage consists of a neutralized common-source …
Frequency reconfigurable mm-wave power amplifier with active impedance synthesis in an asymmetrical non-isolated combiner: Analysis and design
CR Chappidi, K Sengupta - IEEE Journal of Solid-State Circuits, 2017 - ieeexplore.ieee.org
A frequency reconfigurable millimeter-wave (mm-wave) power amplifier (PA), which can be
programmed to operate efficiently for a wide swathe of the spectrum, approaching an …
programmed to operate efficiently for a wide swathe of the spectrum, approaching an …
A 40–67 GHz Power Amplifier With 13 dBm and 16% PAE in 28 nm CMOS LP
M Bassi, J Zhao, A Bevilacqua… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Pushed by the availability of large fractional bandwidths, many well-established applications
are focusing mm-wave spectrum for product deployment. Generation of broadband power at …
are focusing mm-wave spectrum for product deployment. Generation of broadband power at …
94-GHz CMOS power amplifiers using miniature dual Y-shaped combiner with RL load
YS Lin - IEEE Transactions on Circuits and Systems I …, 2017 - ieeexplore.ieee.org
This paper reports two four-way 94-GHz power amplifiers (PAs) for radar sensors in 90-nm
CMOS technology. The first PA (PA1) comprises a two-stage common-source (CS) …
CMOS technology. The first PA (PA1) comprises a two-stage common-source (CS) …
Overview on ESD protection designs of low-parasitic capacitance for RF ICs in CMOS technologies
MD Ker, CY Lin, YW Hsiao - IEEE Transactions on Device and …, 2011 - ieeexplore.ieee.org
CMOS technology has been widely used to implement radio-frequency integrated circuits
(RF ICs). However, the thinner gate oxide in nanoscale CMOS technology seriously …
(RF ICs). However, the thinner gate oxide in nanoscale CMOS technology seriously …
Millimeter-wave self-healing power amplifier with adaptive amplitude and phase linearization in 65-nm CMOS
JYC Liu, R Berenguer… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
A self-healing two-stage millimeter-wave broadband power amplifier (PA) with on-chip
amplitude/phase compensation is realized in 65-nm CMOS. The amplitude and phase …
amplitude/phase compensation is realized in 65-nm CMOS. The amplitude and phase …
A compact E-band power amplifier with gain-boosting and efficiency enhancement
L Chen, L Zhang, Y Wang, Z Yu - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
A compact E-band power amplifier (PA) with gain-boosting and efficiency enhancement
technique is proposed and implemented in a 65-nm CMOS process. The proposed gain …
technique is proposed and implemented in a 65-nm CMOS process. The proposed gain …
A Q-band amplifier implemented with stacked 45-nm CMOS FETs
S Pornpromlikit, HT Dabag, B Hanafi… - 2011 IEEE …, 2011 - ieeexplore.ieee.org
A stacked FET, single-stage 45-GHz (Q-band) CMOS power amplifier (PA) is presented. The
design stacked three FETs to avoid breakdown while allowing a high supply voltage. The IC …
design stacked three FETs to avoid breakdown while allowing a high supply voltage. The IC …
A 60 GHz CMOS power amplifier with built-in pre-distortion linearizer
JH Tsai, CH Wu, HY Yang… - IEEE Microwave and …, 2011 - ieeexplore.ieee.org
A built-in pre-distortion linearizer using cold-mode MOSFET with forward body bias is
presented for 60 GHz CMOS PA linearization on 90 nm CMOS LP process. The power …
presented for 60 GHz CMOS PA linearization on 90 nm CMOS LP process. The power …