Effects of oxygen plasma treatment on Cd1− xZnxTe material and devices
A Brovko, O Amzallag, A Adelberg, L Chernyak… - Nuclear Instruments and …, 2021 - Elsevier
Surface passivation in detectors is designed to improve the performance and stabilize the
characteristics over time and ambient. In Cd 1− x Zn x Te radiation detectors, oxidation by …
characteristics over time and ambient. In Cd 1− x Zn x Te radiation detectors, oxidation by …
Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy
S Mohapatra, M Abhangi, S Vala, PK Sahu… - Journal of …, 2021 - iopscience.iop.org
In this work, the fabrication, electrical characterization and alpha spectral characterization of
single-crystal (SC) diamond bulk radiation detector have been carried out. The performance …
single-crystal (SC) diamond bulk radiation detector have been carried out. The performance …
Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes
P Vigneshwara Raja… - Journal of Applied Physics, 2018 - pubs.aip.org
Deep level defects in 4H-SiC Schottky barrier diodes (SBDs) fabricated on n-type epitaxial
4H-SiC have been identified by thermally stimulated capacitance (TSCAP) spectroscopy …
4H-SiC have been identified by thermally stimulated capacitance (TSCAP) spectroscopy …
Defect characterization and numerical modelling of single-crystal ultra-pure intrinsic diamond
In this paper, the native defects in the bulk of single-crystal semiconducting diamond have
been characterized by thermally stimulated current spectroscopy (TSC), its variant (ie Zero …
been characterized by thermally stimulated current spectroscopy (TSC), its variant (ie Zero …
D–T Neutron and 60Co-Gamma Irradiation Effects on HPSI 4H-SiC Photoconductors
PV Raja, NVLN Murty - IEEE Transactions on Nuclear Science, 2017 - ieeexplore.ieee.org
The 14.1-MeV neutron irradiation-and 60 Co-gamma irradiation-produced traps in high-
purity semi-insulating (TIPS!) 4TI-SiC photoconductors (PCs) are reported, and the …
purity semi-insulating (TIPS!) 4TI-SiC photoconductors (PCs) are reported, and the …
High sensitivity X-ray detectors based on 4H-SiC pin structure with 80 μm thick intrinsic layer
Q Liu, D Zhou, W Xu, D Chen, F Ren… - Journal of Vacuum …, 2021 - pubs.aip.org
In this work, a large size x-ray detector with a 25 mm 2 active area is demonstrated based on
a thick 4H-SiC pin structure. The detector exhibits obvious merits of high photon sensitivity …
a thick 4H-SiC pin structure. The detector exhibits obvious merits of high photon sensitivity …
Performance of epitaxial and HPSI 4H-SiC detectors for plasma X-ray imaging systems
The room temperature X-ray spectral response of Schottky barrier diodes (SBDs) and bulk
detectors on n-type epitaxial 4H-SiC and high-purity semi-insulating (HPSI) 4H-SiC …
detectors on n-type epitaxial 4H-SiC and high-purity semi-insulating (HPSI) 4H-SiC …
Deep-Level Defects in CdZnTe and CdMnTe Detectors Identified by Photo-Induced Current Transient Spectroscopy (PICTS) and Thermally Simulated Current (TSC) …
PV Raja - 2020 - hal.science
The deep-level defects in the Cd1-xZnxTe (CZT) and Cd1-xMnxTe (CMT) detectors are
characterized by photo-induced current transient spectroscopy (PICTS), thermoelectric …
characterized by photo-induced current transient spectroscopy (PICTS), thermoelectric …