In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN
epitaxy growth methods, including mature sputtering technology, the possibility for very large …

This introductory chapter provides a brief survey on the development of epitaxial growth
techniques and points out tasks for the epitaxy of device structures. Starting from early …

The growth of highly uniform arrays of GaN nanocolumns with diameters from 122 to 430 nm
on Si (111) substrates was demonstrated. The employment of GaN film templates with flat …

The lighting sector has seen a tremendous technology revolution in the recent few decades.
This process has been fueled by light emitting diodes (LEDs), when group-III nitride …

Uniform GaN nanorod arrays are grown vertically by selective area growth on⟨ 0001⟩
substrates. The GaN nanorods present six nonpolar {11̅00} facets, which serve as growth …

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell
nanowire-based LEDs grown using selective-area epitaxy and characterize their electro …

High-quality nitride materials grown on scalable and low-cost metallic substrates are
considerably attractive for high-power light-emitters. We demonstrate here, for the first time …

We present the first demonstration of RF characteristics of electrically injected GaN/InGaN
core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …

In this paper, we demonstrate a scalable process for the precise position-controlled selective
growth of GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using …