FSM inspired unconventional Hardware Watermark using field-assisted SOT-MTJ

D Divyanshu, R Kumar, D Khan, S Amara… - IEEE …, 2023 - ieeexplore.ieee.org
The globalization of the Integrated Circuits supply chain has increased threats from
untrusted entities involved in the process. Several mechanisms, such as logic locking …

Spin orbit torque-assisted magnetic tunnel junction-based hardware Trojan

R Kumar, D Divyanshu, D Khan, S Amara, Y Massoud - Electronics, 2022 - mdpi.com
With the advancement of beyond-CMOS devices to keep Moore's law alive, several
emerging devices have found application in a wide range of applications. Spintronic devices …

Logic locking using emerging 2T/3T magnetic tunnel junctions for hardware security

D Divyanshu, R Kumar, D Khan, S Amara… - IEEE …, 2022 - ieeexplore.ieee.org
With the advancement of beyond CMOS devices, a new approach to utilize the inherent
physics of such emerging structures for various applications is of great interest in recent …

Quench protection for high-temperature superconductor cables using active control of current distribution

M Marchevsky, S Prestemon - Superconductor Science and …, 2024 - iopscience.iop.org
Superconducting magnets of future fusion reactors are expected to rely on composite high-
temperature superconductor (HTS) cable conductors. In presently used HTS cables, current …

MOSFET dosimeter characterization in MR‐guided radiation therapy (MRgRT) Linac

P Yadav, A Hallil, D Tewatia… - Journal of applied …, 2020 - Wiley Online Library
Purpose With the increasing use of MR‐guided radiation therapy (MRgRT), it becomes
important to understand and explore accuracy of medical dosimeters in the presence of …

Modeling the effect of strong magnetic field on n-type MOSFET in strong inversion

DV Nguyen, L Werling, C Po, N Dumas… - 2018 25th ieee …, 2018 - ieeexplore.ieee.org
This paper presents an approach to model the effect of magnetic field on the electrical
behavior of MOS transistor. It is shown that an out-of-plane magnetic field B induces a …

[PDF][PDF] Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

GT Hasan, AH Mutlaq, KJ Ali, MA Saad - International Journal of …, 2023 - academia.edu
In this paper, we investigated the effect of magnetic field on the carrier transport
phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double …

Charge Carrier Transport in Field-Effect Transistors with Two-Dimensional Electron Gas Using Geometrical Magnetoresistance Effect

IH Rodrigues - 2022 - search.proquest.com
During the last decades, significant efforts have been made to exploit the excellent and
promising electronic properties exhibited by field-effect transistors (FETs) with two …

[引用][C] Spin Orbit Torque-Assisted Magnetic Tunnel Junction-Based Hardware Trojan. Electronics 2022, 11, 1753

R Kumar, D Divyanshu, D Khan, S Amara… - 2022 - s Note: MDPI stays neutral with …