Low-power electronic technologies for harsh radiation environments

J Prinzie, FM Simanjuntak, P Leroux… - Nature Electronics, 2021 - nature.com
Electronic technologies that can operate in harsh radiation environments are important in
space, nuclear and avionic applications. However, radiation-hardened (rad-hard) integrated …

Conductive bridging random access memory—materials, devices and applications

MN Kozicki, HJ Barnaby - Semiconductor Science and …, 2016 - iopscience.iop.org
We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …

Reconfigurable memristive device technologies

AH Edwards, HJ Barnaby, KA Campbell… - Proceedings of the …, 2015 - ieeexplore.ieee.org
In this paper, we present a review of the state of the art in memristor technologies. Along with
ionic conducting devices [ie, conductive bridging random access memory (CBRAM)], we …

SiO2 based conductive bridging random access memory

W Chen, S Tappertzhofen, HJ Barnaby… - Journal of …, 2017 - Springer
We present a review on the subject of Conductive Bridging Random Access Memory
(CBRAM) based on copper-or silver-doped silicon dioxide. CBRAM is a promising type of …

Review of radiation effects on ReRAM devices and technology

Y Gonzalez-Velo, HJ Barnaby… - … Science and Technology, 2017 - iopscience.iop.org
A review of the ionizing radiation effects on resistive random access memory (ReRAM)
technology and devices is presented in this article. The review focuses on vertical devices …

Total ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond

E Chatzikyriakou, K Morgan… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
From man-made satellites and interplanetary missions to fusion power plants, electronic
equipment that needs to withstand various forms of irradiation is an essential part of their …

Ionizing radiation effects on nonvolatile memory properties of programmable metallization cells

JL Taggart, Y Gonzalez-Velo… - … on Nuclear Science, 2014 - ieeexplore.ieee.org
The impact of ionizing radiation on the retention and endurance of programmable
metallization cells (PMC) ReRAM cells is investigated and presented for the first time, with …

Total ionizing dose retention capability of conductive bridging random access memory

Y Gonzalez-Velo, HJ Barnaby… - IEEE Electron …, 2014 - ieeexplore.ieee.org
Resistance switching memory devices based on cation transport through an electrolyte and
redox reactions at the electrodes have been implemented in a commercial memory …

Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells

M Alayan, M Bagatin, S Gerardin… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
HfO 2-based resistive RAMs have been irradiated with high-linear energy transfer heavy
ions and subjected to an extensive characterization, showing that the cells are immune from …

Sensors based on radiation-induced diffusion of silver in germanium selenide glasses

P Dandamudi, MN Kozicki, HJ Barnaby… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
In this study we demonstrate the potential radiation sensing capabilities of a metal-
chalcogenide glass (ChG) device. The lateral device senses radiation-induced migration of …