We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
AH Edwards, HJ Barnaby, KA Campbell… - Proceedings of the …, 2015 - ieeexplore.ieee.org
In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [ie, conductive bridging random access memory (CBRAM)], we …
We present a review on the subject of Conductive Bridging Random Access Memory (CBRAM) based on copper-or silver-doped silicon dioxide. CBRAM is a promising type of …
Y Gonzalez-Velo, HJ Barnaby… - … Science and Technology, 2017 - iopscience.iop.org
A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices …
From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their …
The impact of ionizing radiation on the retention and endurance of programmable metallization cells (PMC) ReRAM cells is investigated and presented for the first time, with …
Y Gonzalez-Velo, HJ Barnaby… - IEEE Electron …, 2014 - ieeexplore.ieee.org
Resistance switching memory devices based on cation transport through an electrolyte and redox reactions at the electrodes have been implemented in a commercial memory …
M Alayan, M Bagatin, S Gerardin… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
HfO 2-based resistive RAMs have been irradiated with high-linear energy transfer heavy ions and subjected to an extensive characterization, showing that the cells are immune from …
P Dandamudi, MN Kozicki, HJ Barnaby… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
In this study we demonstrate the potential radiation sensing capabilities of a metal- chalcogenide glass (ChG) device. The lateral device senses radiation-induced migration of …