D Minemura, R Kou, Y Sutoh, T Murai, K Yamada… - Optics …, 2023 - opg.optica.org
Optical isolators provide one-way propagation and are necessary to protect laser diodes from damage and unstable operation caused by reflected light. Although magneto-optical …
We propose and demonstrate an improved method for transfer printing that allows for the accurate docking of a photonic crystal nanobeam (NB) laser onto a SiN x waveguide. Our …
T Kikuchi, T Hiratani, N Fujiwara, N Inoue… - Japanese Journal of …, 2022 - iopscience.iop.org
We have fabricated III–V gain region/Si waveguide hybrid lasers with an InP-based two- storied ridge structure using direct bonding technology. Continuous-wave operation at a …
T Kikuchi, M Kurokawa, N Fujiwara… - Japanese Journal of …, 2023 - iopscience.iop.org
The direct bonding process of InP chips on a silicon-on-insulator (SOI) wafer is investigated using surface hydrophilization by UV-ozone treatment. The influence of the treatment on …
TW Lu, JT Wang, YC Lin, PT Lee - Journal of Lightwave …, 2022 - ieeexplore.ieee.org
We propose and study the hybrid integration of a 1D photonic crystal (PhC) nanobeam (NB) laser on a SiN x waveguide. With modifications by reduced-PhCs and a tapered beam to the …
A high-speed InP-based electro-absorption modulator (EAM) on 220 nm silicon-on-insulator (SOI) is designed, fabricated, and measured. The III–V device is heterogeneously integrated …
I Novitasari, SL Lee - Chinese Journal of Physics, 2024 - Elsevier
The technology for heterogeneously integrating active III-V material structures on silicon photonic platforms has gained considerable advancement in recent years. Most of the prior …
3D integration of GaSb-based gain chips on a silicon photonics platform using micro-transfer printing is demonstrated for the first time. The release process of GaSb coupons, and their …