Recent development of two-dimensional transition metal dichalcogenides and their applications

W Choi, N Choudhary, GH Han, J Park, D Akinwande… - Materials Today, 2017 - Elsevier
Recent advances in atomically thin two-dimensional transition metal dichalcogenides (2D
TMDs) have led to a variety of promising technologies for nanoelectronics, photonics …

Transition metal dichalcogenide (TMDs) electrodes for supercapacitors: a comprehensive review

S Tanwar, A Arya, A Gaur… - Journal of Physics …, 2021 - iopscience.iop.org
As globally, the main focus of the researchers is to develop novel electrode materials that
exhibit high energy and power density for efficient performance energy storage devices. This …

MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications

R Venkatasubramanian, T Colpitts, E Watko… - Journal of crystal …, 1997 - Elsevier
The characteristics of metalorganic chemical vapor deposition (MOCVD) of Bi2Te3, Sb2Te3
and their superlattice structures are discussed in this paper. We have grown c-oriented films …

Review of 3D topological insulator thin‐film growth by molecular beam epitaxy and potential applications

L He, X Kou, KL Wang - physica status solidi (RRL)–Rapid …, 2013 - Wiley Online Library
Thin films of V–VI compound semiconductors (Bi2Se3, Bi2Te3 and Sb2Te3) have been
synthesized recently as three‐dimensional topological insulators (TIs). Although these …

Synthesis and functionalization of 2D nanomaterials for application in lithium-based energy storage systems

S Ruan, D Luo, M Li, J Wang, L Ling, A Yu… - Energy Storage …, 2021 - Elsevier
The rising demands for efficient regulating the intermittency of renewable energies as well
as the rapid spread of portable electronics or electric vehicles have put forward higher …

Diluted magnetic semiconductors based on

JS Dyck, P Hájek, P Lošt'ák, C Uher - Physical Review B, 2002 - APS
We report on a diluted magnetic semiconductor based on the Sb 2 Te 3 tetradymite structure
doped with very low concentrations of vanadium (1–3 at.%). The anomalous transport …

Antisite defects of thin films

S Cho, Y Kim, A DiVenere, GK Wong… - Applied physics …, 1999 - pubs.aip.org
We have successfully grown Bi 2 Te 3 thin films on CdTe (111) B using molecular-beam
epitaxy. Structural and transport properties have been investigated using in situ reflection …

Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed laser deposition

PH Le, CN Liao, CW Luo, J Leu - Journal of alloys and compounds, 2014 - Elsevier
Nanostructured n-type bismuth telluride (Bi 2 Te 3) thin films were grown on SiO 2/Si (1 0 0)
substrates at argon ambient pressure (P Ar) of 80 Pa by pulsed laser deposition (PLD). The …

Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy

SE Harrison, S Li, Y Huo, B Zhou, YL Chen… - Applied Physics …, 2013 - pubs.aip.org
Large-area topological insulator Bi 2 Te 3 thin films were grown on Al 2 O 3 (0001) using a
two-temperature step molecular beam epitaxy growth process. By depositing a low …

Recent advancements of two-dimensional transition metal dichalcogenides and their applications in electrocatalysis and energy storage

SN Upadhyay, JAK Satrughna, S Pakhira - Emergent materials, 2021 - Springer
The discovery of graphene has stirred an intensive research interest in two-dimensional
(2D) materials, but its lack of an electronic band gap has stimulated the research for novel …